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SEMICONDUCTOR DEVICE

  • US 20180269327A1
  • Filed: 05/18/2018
  • Published: 09/20/2018
  • Est. Priority Date: 08/31/2016
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device comprising:

  • forming a first transistor and a second transistor;

    wherein the first transistor comprises;

    a first oxide over a first insulating film;

    a first gate insulating film over the first oxide; and

    a first gate electrode over the first gate insulating film,wherein the second transistor comprises;

    a second oxide over the first insulating film;

    a second gate insulating film over the second oxide; and

    a second gate electrode over the second gate insulating film,forming a second insulating film covering the first transistor and the second transistor;

    forming a third insulating film by etching the second insulating film, wherein the third insulating film covers at least part of the first transistor; and

    forming a fourth insulating film over the third insulating film, the first transistor and the second transistor,wherein the third insulating film is in contact with the first gate insulating film and a first region of the first insulating film,wherein the fourth insulating film is in contact with the second gate insulating film and a second region of the first insulating film, andwherein the second insulating film comprises a metal oxide.

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