Manufacturing Method of Light Emitting Diode Device and Light Emitting Diode Device

• US 20180269352A1
• Filed: 11/15/2017
• Published: 09/20/2018
• Est. Priority Date: 03/15/2017
• Status: Active Grant

• Current Assignee: Beijing BOE Optoelectronics Technology Co Ltd. (BOE Technology Group Co., Ltd.), BOE Technology Group Co., Ltd.
• Original Assignee: Beijing BOE Optoelectronics Technology Co Ltd. (BOE Technology Group Co., Ltd.), BOE Technology Group Co., Ltd.
• Inventors: Tian, Ting, Zhai, Ming, Dou, Shuqian, Zhou, Dayong, Cheng, Jun, Fu, Xiaoliang, Fan, Zhiqiang, Kang, Taesung
• Granted Patent: US 10,644,195 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/28 containing only elements of Group II and Group VI of the Periodic Table
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/34 containing only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A manufacturing method of a light emitting diode device and a light emitting diode device are provided. The manufacturing method of the light emitting diode device includes: forming a light emitting lamination layer on a base substrate, the light emitting lamination layer including a first semiconductor layer, a first light emitting layer, a second semiconductor layer, a second light emitting layer and a third semiconductor layer sequentially formed on the base substrate; dividing the light emitting lamination layer to form a plurality of light emitting units spaced from each other, each light emitting unit including a first area and a second area spaced from each other; and removing the third semiconductor layer and the second light emitting layer in the first area to form a first sub light emitting unit, and the second area being used for forming a second sub light emitting unit.

Claims

1. A manufacturing method of a light emitting diode (LED) device, comprising:

forming a light emitting lamination layer on a base substrate, the light emitting lamination layer comprising a first semiconductor layer with a first conductive type, a first light emitting layer, a second semiconductor layer with a second conductive type, a second light emitting layer and a third semiconductor layer with the first conductive type sequentially formed on the base substrate;

dividing the light emitting lamination layer to form a plurality of light emitting units spaced from each other, each light emitting unit comprising a first area and a second area spaced from each other; and

removing the third semiconductor layer and the second light emitting layer in the first area to form a first sub light emitting unit, and the second area being used for forming a second sub light emitting unit.

2. The manufacturing method of the light emitting diode device according to claim 1, further comprising:

etching the second semiconductor layer and the first light emitting layer of the first sub light emitting unit to expose a portion of the first semiconductor layer; and

etching the third semiconductor layer and the second light emitting layer of the second sub light emitting unit to expose a portion of the second semiconductor layer.

3. The manufacturing method of the light emitting diode device according to claim 2, further comprising:

in the first sub light emitting unit, forming a first electrode and a second electrode respectively on an exposed portion of the first semiconductor layer and the second semiconductor layer; and

in the second sub light emitting unit, forming a third electrode and a fourth electrode respectively on the third semiconductor layer and an exposed portion of the second semiconductor layer.

4. The manufacturing method of the light emitting diode device according to claim 3, wherein,

the light emitting lamination layer further comprises a third light emitting layer and a fourth semiconductor layer with the second conductive type sequentially formed on the third semiconductor layer;

each light emitting unit further comprises a third area spaced apart from the first area and the second area;

the manufacturing method comprises;

removing the fourth semiconductor layer, the third light emitting layer, the third semiconductor layer and the second light emitting layer in the first area to form the first sub light emitting unit, and

removing the fourth semiconductor layer and the third light emitting layer in the second area to form the second sub light emitting unit, and the third area being used for forming a third sub light emitting unit.

5. The manufacturing method of the light emitting diode device according to claim 4, further comprising:

etching the fourth semiconductor layer and the third light emitting layer of the third sub light emitting unit to expose a portion of the third semiconductor layer.

6. The manufacturing method of the light emitting diode device according to claim 5, further comprising:

in the third sub light emitting unit, forming a fifth electrode and a sixth electrode respectively on an exposed portion of the third semiconductor layer and the fourth semiconductor layer.

7. The manufacturing method of the light emitting diode device according to claim 3, further comprising:

providing a substrate;

forming a plurality of contact electrodes insulated from each other on the substrate; and

bonding each light emitting unit to the substrate, each light emitting unit being electrically connected with corresponding contact electrodes.

8. The manufacturing method of the light emitting diode device according to claim 6, further comprising:

providing a substrate;

forming a plurality of contact electrodes insulated from each other on the substrate; and

bonding each light emitting unit to the substrate, each light emitting unit being electrically connected with corresponding contact electrodes.

9. The manufacturing method of the light emitting diode device according to claim 1, further comprising:

forming a buffer layer on the base substrate,

wherein, the light emitting lamination layer is formed on the buffer layer.

10. The manufacturing method of the light emitting diode device according to claim 3, further comprising:

forming a buffer layer on the base substrate,

wherein, the light emitting lamination layer is formed on the buffer layer.

11. A light emitting diode (LED) device, comprising:

a plurality of light emitting units, each light emitting unit comprising a first sub light emitting unit and a second light emitting unit spaced apart from each other;

wherein,

the first sub light emitting unit comprises a first semiconductor layer with a first conductive type, a first light emitting layer and a second semiconductor layer with a second conductive type, which are sequentially disposed; and

the second sub light emitting unit comprises the first semiconductor layer, the first light emitting layer, the second semiconductor layer, a second light emitting layer and a third semiconductor layer with the first conductive type, which are sequentially disposed.

12. The light emitting diode device according to claim 11, wherein,

in the first sub light emitting unit, the first light emitting layer and the second semiconductor layer partially cover the first semiconductor layer, a first electrode is disposed on an exposed portion of the first semiconductor layer, and a second electrode is disposed on the second semiconductor layer;

and

in the second sub light emitting unit, the second light emitting layer and the third semiconductor layer partially cover the second semiconductor layer, a fourth electrode is disposed on an exposed portion of the second semiconductor layer, and a third electrode is disposed on the third semiconductor layer.

13. The light emitting diode device according to claim 12, wherein,

each light emitting unit further comprises a third sub light emitting unit spaced apart from the first sub light emitting unit and the second light emitting unit,

the third sub light emitting unit comprises the first semiconductor layer, the first light emitting layer, the second semiconductor layer, the second light emitting layer, the third semiconductor layer, a third light emitting layer and a fourth semiconductor layer with the second conductive type, which are sequentially disposed.

14. The light emitting diode device according to claim 13, wherein,

in the third sub light emitting unit, the third light emitting layer and the fourth semiconductor layer partially cover the third semiconductor layer, a fifth electrode is disposed on an exposed portion of the third semiconductor layer, and a sixth electrode is disposed on the fourth semiconductor layer.

15. The light emitting diode device according to claim 12, further comprising:

a substrate, the substrate comprising a plurality of contact electrodes insulated from each other;

wherein, each light emitting unit is bonded to the substrate, and each light emitting unit is electrically connected with corresponding contact electrodes.

16. The light emitting diode device according to claim 14, further comprising:

a substrate, the substrate comprising a plurality of contact electrodes insulated from each other;

wherein, each light emitting unit is bonded to the substrate, and each light emitting unit is electrically connected with corresponding contact electrodes.

17. The light emitting diode device according to claim 11, wherein, each light emitting unit further comprises a buffer layer, and the first semiconductor layer is disposed on the buffer layer.

18. The light emitting diode device according to claim 11, wherein, color of light emitted by the first sub light emitting unit is different from color of light emitted by the second sub light emitting unit.

19. The light emitting diode device according to claim 12, wherein, each light emitting unit further comprises a buffer layer, and the first semiconductor layer is disposed on the buffer layer.

20. The light emitting diode device according to claim 12, wherein, color of light emitted by the first sub light emitting unit is different from color of light emitted by the second sub light emitting unit.