INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING THE SAME
First Claim
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1. An integrated circuit device comprising:
- a substrate comprising a main surface;
a transistor (TR) comprising a first section, a vertical channel region, and a second section on the main surface; and
a gate electrode on the vertical channel region,wherein the first section, the vertical channel region, and the second section extend from the main surface in a first direction perpendicular to the main surface, wherein the vertical channel region and the first and second sections have the same composition as each other and have different crystal phases from each other, and wherein the vertical channel region has a first width in a second direction parallel to the main surface and the first section has a second width in the second direction, the first width being narrower than the second width.
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Abstract
An integrated circuit device may include a substrate including a main surface, a compound semiconductor nanowire extending from the main surface in a first direction perpendicular to the main surface and including a first section and a second section alternately arranged in the first direction, a gate electrode covering the first section, and a gate dielectric layer between the first section and the gate electrode. The first section and the second section may have the same composition as each other and may have different crystal phases from each other
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Citations
18 Claims
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1. An integrated circuit device comprising:
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a substrate comprising a main surface; a transistor (TR) comprising a first section, a vertical channel region, and a second section on the main surface; and a gate electrode on the vertical channel region, wherein the first section, the vertical channel region, and the second section extend from the main surface in a first direction perpendicular to the main surface, wherein the vertical channel region and the first and second sections have the same composition as each other and have different crystal phases from each other, and wherein the vertical channel region has a first width in a second direction parallel to the main surface and the first section has a second width in the second direction, the first width being narrower than the second width. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An integrated circuit device comprising:
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a substrate comprising a main surface; a transistor (TR) comprising a first section, a vertical channel region, and a second section on the main surface, wherein the first section, the vertical channel region, and the second section extend from the main surface in a first direction perpendicular to the main surface, wherein the vertical channel region and the first and second sections have the same composition as each other and have different crystal phases from each other; a gate electrode on the vertical channel region; and an interfacial layer between the vertical channel region and the gate electrode, the vertical channel region being recessed relative to the first and second sections in a second direction parallel to the main surface. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification