SEMICONDUCTOR LIGHT EMITTING DIODE

• US 20180301596A1
• Filed: 04/17/2017
• Published: 10/18/2018
• Est. Priority Date: 04/17/2017
• Status: Active Grant

• Current Assignee: Lumens Co., Ltd.
• Original Assignee: Lumens Co., Ltd.
• Inventors: YOO, Tae Kyung, KIM, Dae Won
• Granted Patent: US 10,396,248 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A semiconductor light emitting diode is disclosed. The semiconductor light emitting diode includes a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, a transparent electrode formed on the second conductive semiconductor layer, a non-conductive reflection film covering the circumferential surface of the transparent electrode and having one or more via-holes formed therein, a reflective electrode formed on the non-conductive reflection film, interconnection electrodes filled in the via-holes and electrically connecting the reflective electrode to the transparent electrode, and ohmic contact layers formed between the transparent electrode and the interconnection electrodes and filled in recesses formed at positions of the transparent electrode corresponding to the via-holes by etching or extending through the via-holes from the recesses.

Claims

1. A semiconductor light emitting diode comprising:

a first conductive semiconductor layer,

a second conductive semiconductor layer,

an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer,

a transparent electrode formed on the second conductive semiconductor layer,

a non-conductive reflection film covering a circumferential surface of the transparent electrode and having one or more via-holes formed therein,

a reflective electrode formed on the non-conductive reflection film,

interconnection electrodes filled in the via-holes and electrically connecting the reflective electrode to the transparent electrode, and

ohmic contact layers formed between the transparent electrode and the interconnection electrodes,

wherein when an outer lead frame made of or plated with copper or gold is provided, a reflectance of the non-conductive reflection film for light at a wavelength of 400 nm is at least 80%.

2. The semiconductor light emitting diode according to claim 1, wherein the ohmic contact layers are filled in recesses formed at positions of the transparent electrode corresponding to the via-holes by etching or extend through the via-holes from the recesses.

3. The semiconductor light emitting diode according to claim 1, further comprising connection electrodes formed between the transparent electrode and the interconnection electrodes.

4. The semiconductor light emitting diode according to claim 3, wherein each of the connection electrodes further comprises an ohmic contact layer formed at an interface with the corresponding interconnection electrode.

6. The semiconductor light emitting diode according to claim 1, wherein the non-conductive reflection film comprises titanium dioxide (TiO₂) distributed Bragg reflectors (DBRs) and silicon dioxide (SiO₂) distributed Bragg reflectors stacked alternately.

7. The semiconductor light emitting diode according to claim 6, wherein one of pairs of distributed Bragg reflectors has a thickness of 40 to 200 nm to reflect ultraviolet (UV) light emitted from the active layer.

8. The semiconductor light emitting diode according to claim 7, wherein the transparent electrode comprises indium tin oxide (ITO), zinc oxide (ZnO) or a metal layer having a transmittance of at least 90% for light at a wavelength of 400 nm.

9. The semiconductor light emitting diode according to claim 1, wherein the transparent electrode has a thickness of 20 to 500 nm and contains at least one of nickel (Ni), titanium (Ti), tungsten (W), silver (Ag), chromium (Cr), palladium (Pd), and molybdenum (Mo).

12. The semiconductor light emitting diode according to claim 1, wherein non-conductive reflection film is composed of a light-transmitting material comprising at least one compound selected from Si_xO_y (where x and y are positive integers), Ti_mO_n (where m and n are positive integers), Ta₂O₅, and MgF₂.

14. The semiconductor light emitting diode according to claim 1, further comprising an n-type electrode unit arranged on the first conductive semiconductor layer.

15. The semiconductor light emitting diode according to claim 14, wherein the n-type electrode unit comprises an n-type electrode insulating layer, n-type electrodes filled in via-holes formed in the n-type electrode insulating layer, and an n-type bonding member arranged over the n-type electrode insulating layer and the n-type electrodes.

16. The semiconductor light emitting diode according to claim 15, wherein the n-type electrodes and the interconnection electrodes are aligned in a matrix structure.

17. The semiconductor light emitting diode according to claim 16, wherein the n-type electrodes and the interconnection electrodes form an engaged structure.

5. (canceled)

10. A semiconductor light emitting diode comprising:

a first conductive semiconductor layer,

a second conductive semiconductor layer,

an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer,

a transparent electrode formed on the second conductive semiconductor layer,

a non-conductive reflection film covering a circumferential surface of the transparent electrode and having one or more via-holes formed therein,

a reflective electrode formed on the non-conductive reflection film,

interconnection electrodes filled in the via-holes and electrically connecting the reflective electrode to the transparent electrode, and

ohmic contact layers formed between the transparent electrode and the interconnection electrodes,

wherein the transparent electrode includes an uneven area formed at an interface with the non-conductive reflection film.

11. The semiconductor light emitting diode according to claim 10, wherein the uneven area is formed at the interface with the non-conductive reflection film other than contact areas between the transparent electrode and the interconnection electrodes.

13. A semiconductor light emitting diode comprising:

a first conductive semiconductor layer,

a second conductive semiconductor layer,

an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer,

a transparent electrode formed on the second conductive semiconductor layer,

a non-conductive reflection film covering a circumferential surface of the transparent electrode and having one or more via-holes formed therein,

a reflective electrode formed on the non-conductive reflection film,

interconnection electrodes filled in the via-holes and electrically connecting the reflective electrode to the transparent electrode, and

ohmic contact layers formed between the transparent electrode and the interconnection electrodes,

wherein the second conductive semiconductor layer includes an uneven area formed at an interface with the transparent electrode.

18. -20. (canceled)