SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• US 20180308707A1
• Filed: 02/26/2018
• Published: 10/25/2018
• Est. Priority Date: 04/25/2017
• Status: Active Grant

• Current Assignee: Hitachi High-Tech Company Limited (Hitachi, Ltd.)
• Original Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Inventors: YAMAGUCHI, Yoshihide
• Granted Patent: US 10,460,953 B2
• Time in Patent Office: Days
• CPC Class Codes: C23C 16/45559 Diffusion of reactive gas to substrate
• CPC Class Codes: H01L 21/02181 the material containing hafnium, e.g. HfO2
• CPC Class Codes: H01L 21/02183 the material containing tantalum, e.g. Ta2O5
• CPC Class Codes: H01L 21/02186 the material containing titanium, e.g. TiO2
• CPC Class Codes: H01L 21/02189 the material containing zirconium, e.g. ZrO2
• CPC Class Codes: H01L 21/02192 the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
• CPC Class Codes: H01L 21/28185 with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
• CPC Class Codes: H01L 21/31122 of layers not containing Si, e.g. PZT, Al2O3
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/6719 characterized by the construction of the processing chambers, e.g. modular processing chambers
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence

Abstract

Provided is a semiconductor manufacturing apparatus including: a container in which a processing chamber is installed; a stage installed in the processing chamber and configured to hold a semiconductor substrate; a gas supply line configured to supply reactive gas to the processing chamber; and a vacuum line configured to exhaust the processing chamber, wherein the semiconductor substrate includes a high-k insulating film, and as the reactive gas, mixed gas including complex-forming gas forming a volatile organometallic complex by reacting with a metal element included in the high-k insulating film and complex stabilizing material gas that increases stability of the organometallic complex is supplied.

Claims

1. A semiconductor manufacturing apparatus, comprising:

a container in which a processing chamber is installed;

a stage installed in the processing chamber and configured to hold a semiconductor substrate;

a gas supply line configured to supply reactive gas to the processing chamber; and

a vacuum line configured to exhaust the processing chamber,

wherein the semiconductor substrate includes a high-k insulating film, and

as the reactive gas, mixed gas including complex-forming gas forming a volatile organometallic complex by reacting with a metal element included in the high-k insulating film and complex stabilizing material gas that increases stability of the organometallic complex is supplied.

2. The semiconductor manufacturing apparatus according to claim 1, wherein the metal element included in the high-k insulating film is a metal element classified in a fifth period and the following periods of a periodic table.

3. The semiconductor manufacturing apparatus according to claim 1, wherein the metal element included in the high-k insulating film is a rare earth element.

4. The semiconductor manufacturing apparatus according to claim 1, further comprising:

a first vaporizer connected to the gas supply line,

wherein the first vaporizer vaporizes a mixed chemical liquid of a chemical stock solution of the complex-forming gas and a chemical stock solution of the complex stabilizing material gas under a predetermined temperature and pressure condition.

5. The semiconductor manufacturing apparatus according to claim 4, further comprising:

a chemical liquid tank connected to the first vaporizer and filled with the mixed chemical liquid; and

a mixed chemical liquid composition adjustment unit configured to monitor a composition of the mixed chemical liquid filled in the chemical liquid tank and adjust the composition of the mixed chemical liquid.

6. The semiconductor manufacturing apparatus according to claim 4, further comprising:

a second vaporizer connected to the gas supply line,

wherein the second vaporizer vaporizes a chemical stock solution different from that of the first vaporizer under the predetermined temperature and pressure condition.

7. The semiconductor manufacturing apparatus according to claim 1, further comprising:

a trap installed in the vacuum line and configured to recover the reactive gas and the organometallic complex exhausted from the processing chamber.

8. The semiconductor manufacturing apparatus according to claim 7, further comprising:

a collecting and sorting device configured to react the reactive gas and the organometallic complex collected by the trap with an acid treatment liquid to regenerate a raw material for the complex-forming gas and a raw material for the complex stabilizing material gas.

9. A method for manufacturing a semiconductor device, the method comprising:

placing, in a processing chamber, a semiconductor substrate on which a mask layer having a predetermined pattern shape is formed on a high-k insulating film;

desorbing gas or a foreign matter adsorbed on a surface of the semiconductor substrate;

supplying reactive gas to the processing chamber in a state where a temperature of the semiconductor substrate falls below a predetermined temperature;

stopping the supply of the reactive gas and heating the semiconductor substrate; and

vaporizing an organometallic complex generated by reacting with a metal element included in the high-k insulating film and exhausting the vaporized organometallic complex from the processing chamber,

wherein the reactive gas is mixed gas including complex-forming gas forming the organometallic complex by reacting with the metal element included in the high-k insulating film and complex stabilizing material gas that increases stability of the organometallic complex.

10. The method according to claim 9, wherein the metal element included in the high-k insulating film is a metal element classified in a fifth period and the following periods of a periodic table.

11. The method according to claim 9, wherein the metal element included in the high-k insulating film is a rare earth element.

12. The method according to claim 9, wherein a raw material for the complex-forming gas is an organic compound capable of forming at least two or more coordination bonds to a transition metal atom, that is, a so-called multidentate ligand molecule.

13. The method according to claim 12, wherein the raw material for the complex-forming gas includes any of diketones, ketoester, and ketoimine.

14. The method according to claim 9, wherein a raw material for the complex stabilizing material gas is an organic compound having two or more elements having an unshared electron pair such as an oxygen atom or a nitrogen atom in a molecular skeleton and five or more atoms except for a hydrogen atom and a fluorine atom.

15. The method according to claim 14, wherein the raw material for the complex stabilizing material gas is ethers.