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SUPER-SATURATION CURRENT FIELD EFFECT TRANSISTOR AND TRANS-IMPEDANCE MOS DEVICE

  • US 20180308843A1
  • Filed: 07/29/2016
  • Published: 10/25/2018
  • Est. Priority Date: 12/14/2015
  • Status: Active Application
First Claim
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1. A field effect transistor, comprisinga. a semiconductor substrate of a first conductivity type, havinga source terminal, a drain terminal, a diffusion terminal, a first gate terminal, and a second gate terminal;

  • a source channel is defined between said source terminal and diffusion terminal,a drain channel is defined between said drain terminal and diffusion terminal;

    said first gate terminal is capacitively coupled to said source channel; and

    said second gate terminal is capacitively coupled to said drain channel;

    wherein the diffusion terminal receives a current causing change in diffused charge density throughout said source and drain channel.

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