SENSOR DEVICE

• US 20180308981A1
• Filed: 04/03/2018
• Published: 10/25/2018
• Est. Priority Date: 04/24/2017
• Status: Active Grant

• Current Assignee: Innocare Optoelectronics Corporation (InnoLux Corporation)
• Original Assignee: InnoLux Corporation
• Inventors: Wu, Chih-Hao, Sung, Li-Wei
• Granted Patent: US 10,446,602 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/14612 involving a transistor
• CPC Class Codes: H01L 27/14658 X-ray, gamma-ray or corpuscular radiation imagers measuring X-, gamma- or corpuscular radiation G01T1/00
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A sensor device is provided and includes a first transistor, a second transistor, a third transistor, and a photosensor. The first transistor has a first gate, a first drain, and a first source. The first drain is coupled to a first power line and has a concave surface, and the first source is disposed corresponding to the concave surface. The second transistor has a second source, coupled to the first gate. The third transistor has a third gate, a third drain, and a third source, the third drain is coupled to the first source, the third source is coupled to the data line, and the third gate is coupled to the readout line. The photosensor is coupled to the first gate.

Claims

1. A sensor device, comprising:

a readout line;

a data line;

a first power line; and

a sensor unit, comprising;

a first transistor, having a first gate, a first drain, and a first source, wherein the first drain is coupled to the first power line, the first drain has a concave surface, and the first source is disposed corresponding to the concave surface;

a second transistor, having a second gate, a second drain, and a second source, wherein the second source is coupled to the first gate;

a third transistor, having a third gate, a third drain, and a third source, wherein the third drain is coupled to the first source, the third source is coupled to the data line, and the third gate is coupled to the readout line; and

a photosensor, coupled to the first gate.

2. The sensor device according to claim 1, further comprising a second power line, and the second drain being coupled to the second power line.

3. The sensor device according to claim 2, further comprising a bias line, wherein the photosensor comprises a photodiode, the photodiode comprises an anode and a cathode, the anode is coupled to one of the first gate and the bias line, and the cathode is coupled to the other one of the first gate and the bias line.

4. The sensor device according to claim 1, wherein the second drain is coupled to the first power line.

5. The sensor device according to claim 4, further comprising a bias line, wherein the photosensor comprises a photodiode, the photodiode comprises an anode and a cathode, the cathode is coupled to one of the first gate and the bias line, and the anode is coupled to the other one of the first gate and the bias line.

6. The sensor device according to claim 1, wherein the concave surface comprises a concave part, and the first source overlaps the concave part in a top view direction.

7. The sensor device according to claim 1, wherein the first transistor further comprises a first semiconductor layer, the second transistor further comprises a second semiconductor layer, the third transistor further comprises a third semiconductor layer, wherein at least one of the first semiconductor layer, the second semiconductor layer and the third semiconductor layer comprises poly-silicon, and at least another one of the first semiconductor layer, the second semiconductor layer and the third semiconductor layer comprises oxide semiconductor or amorphous silicon.

8. The sensor device according to claim 1, wherein the first transistor further comprises a first semiconductor layer, the second transistor further comprises a second semiconductor layer, the third transistor further comprises a third semiconductor layer, wherein at least one of the first semiconductor layer, the second semiconductor layer and the third semiconductor layer comprises oxide semiconductor.

9. The sensor device according to claim 1, wherein the readout line is perpendicular to the first power line.

10. A sensor device, comprising:

a readout line;

a data line;

a first power line; and

a sensor unit, comprising;

a first transistor, having a first gate, a first drain, a first source, and a semiconductor layer, wherein the first drain is coupled to the first power line;

a second transistor, having a second gate, a second drain, a second source, and a second semiconductor layer, wherein the second source is coupled to the first gate;

a third transistor, having a third gate, a third drain, a third source, and a third semiconductor layer, wherein the third drain is coupled to the first source, the third source is coupled to the data line, and the third gate is coupled to the readout line; and

a photosensor, coupled to the first gate,

wherein at least one of the first semiconductor layer, the second semiconductor layer and the third semiconductor layer comprises poly-silicon, and at least another one of the first semiconductor layer, the second semiconductor layer and the third semiconductor layer comprises oxide semiconductor or amorphous silicon.

11. The sensor device according to claim 10, wherein the first semiconductor layer comprises poly-silicon, and the second semiconductor layer comprises oxide semiconductor or amorphous silicon.

12. The sensor device according to claim 10, wherein the third semiconductor layer comprises poly-silicon and the second semiconductor layer comprises oxide semiconductor or amorphous silicon.

13. The sensor device according to claim 10, further comprising a second power line, wherein the second drain is coupled to the second power line.

14. The sensor device according to claim 13, further comprising a bias line, wherein the photosensor comprises a photodiode, the photodiode comprises an anode and a cathode, the anode is coupled to one of the first gate and the bias line, and the cathode is coupled to the other of the first gate and the bias line.

15. The sensor device according to claim 10, wherein the second drain is coupled to the first power line.

16. The sensor device according to claim 15, further comprising a bias line, wherein the photosensor comprises a photodiode, the photodiode comprises an anode and a cathode, the cathode is coupled to one of the first gate and the bias line, and the anode is coupled to the other one of the first gate and the bias line.

17. The sensor device according to claim 10, wherein the readout line is perpendicular to the first power line.

18. A sensor device, comprising:

a readout line;

a data line;

a first power line; and

a sensor unit, comprising;

a first transistor, having a first gate, a first drain, a first source, and a semiconductor layer, wherein the first drain is coupled to the first power line;

a second transistor, having a second gate, a second drain, a second source, and a second semiconductor layer, wherein the second source is coupled to the first gate;

a third transistor, having a third gate, a third drain, a third source, and a third semiconductor layer, wherein the third drain is coupled to the first source, the third source is coupled to the data line, and the third gate is coupled to the readout line; and

a photosensor, coupled to the first gate,

wherein at least one of the first semiconductor layer, the second semiconductor layer and the third semiconductor layer comprises oxide semiconductor.

19. The sensor device according to claim 18, wherein the second semiconductor layer comprises oxide semiconductor, and another two of the first semiconductor layer, the second semiconductor layer and the third semiconductor layer comprise oxide semiconductor or amorphous silicon.

20. The sensor device according to claim 18, further comprising a second power line, wherein the second drain is coupled to the second power line.

21. The sensor device according to claim 20, further comprising a bias line, wherein the photosensor comprises a photodiode, the photodiode comprises an anode and a cathode, the anode is coupled to one of the first gate and the bias line, and the cathode is coupled to the other of the first gate and the bias line.

22. The sensor device according to claim 18, wherein the second drain is coupled to the first power line.

23. The sensor device according to claim 22, further comprising a bias line, wherein the photosensor comprises a photodiode, the photodiode comprises an anode and a cathode, the cathode is coupled to one of the first gate and the bias line, and the anode is coupled to the other one of the first gate and the bias line.

24. The sensor device according to claim 18, wherein the readout line is perpendicular to the first power line.