TRENCH MOSFET DEVICE AND THE PREPARATION METHOD THEREOF
First Claim
1. A method for fabricating a trench metal-oxide-semiconductor field-effect transistor (MOSFET) device, the method comprising the steps of:
- providing a semiconductor substrate of a first conductivity type;
forming a plurality of first trenches arranged side by side in a first stripe layout extending along a first direction in a first preset area of the semiconductor substrate;
forming a plurality of second trenches arranged side by side in a second stripe layout extending along a second direction perpendicular to the first direction in a second preset area of the semiconductor substrate;
filling the plurality of first trenches and the plurality of second trenches with a conductive material so as to form a plurality of control gates;
implanting dopant of a second conductivity type on a top portion of the semiconductor substrate to form a body region; and
implanting dopant of the first conductivity type on a top portion of the body region to form a source region.
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Accused Products
Abstract
A trench-type metal-oxide-semiconductor field-effect transistor (MOSFET) device and a fabrication method are disclosed. A semiconductor substrate of a first conductivity type is provided. A plurality of first trenches arranged side by side in a first stripe layout extending along a first direction in a first preset area of the semiconductor substrate are formed. A plurality of second trenches arranged side by side in a second stripe layout extending along a second direction perpendicular to the first direction in a second preset area of the semiconductor substrate are formed. The plurality of first trenches and the plurality of second trenches are filled with a conductive material so as to form a plurality of control gates.
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Citations
8 Claims
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1. A method for fabricating a trench metal-oxide-semiconductor field-effect transistor (MOSFET) device, the method comprising the steps of:
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providing a semiconductor substrate of a first conductivity type; forming a plurality of first trenches arranged side by side in a first stripe layout extending along a first direction in a first preset area of the semiconductor substrate; forming a plurality of second trenches arranged side by side in a second stripe layout extending along a second direction perpendicular to the first direction in a second preset area of the semiconductor substrate; filling the plurality of first trenches and the plurality of second trenches with a conductive material so as to form a plurality of control gates; implanting dopant of a second conductivity type on a top portion of the semiconductor substrate to form a body region; and implanting dopant of the first conductivity type on a top portion of the body region to form a source region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification