Field-Effect Semiconductor Device Having a Heterojunction Contact
First Claim
1. A semiconductor device, comprising:
- a semiconductor body having a main surface, the semiconductor body comprising a drift region of monocrystalline SiC, the drift region being of a first conductivity type; and
a metallization arranged at the main surface,wherein in a cross-section which is substantially orthogonal to the main surface, the semiconductor body further comprises;
a contact region of the monocrystalline SiC directly adjoining the drift region and the metallization, the contact region being of a second conductivity type; and
an anode region of a semiconductor material having a lower band-gap than the monocrystalline SiC, the anode region being in ohmic contact with the metallization and forming a heterojunction with the drift region.
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Accused Products
Abstract
According to an embodiment of a semiconductor device, the semiconductor device includes a semiconductor body having a main surface, the semiconductor body including a drift region of monocrystalline SiC, the drift region being of a first conductivity type, and a metallization arranged at the main surface. In a cross-section which is substantially orthogonal to the main surface, the semiconductor body further includes a contact region of the monocrystalline SiC directly adjoining the drift region and the metallization, and an anode region of a semiconductor material having a lower band-gap than the monocrystalline SiC. The contact region is of a second conductivity type. The anode region is in ohmic contact with the metallization and forms a heterojunction with the drift region.
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Citations
15 Claims
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1. A semiconductor device, comprising:
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a semiconductor body having a main surface, the semiconductor body comprising a drift region of monocrystalline SiC, the drift region being of a first conductivity type; and a metallization arranged at the main surface, wherein in a cross-section which is substantially orthogonal to the main surface, the semiconductor body further comprises; a contact region of the monocrystalline SiC directly adjoining the drift region and the metallization, the contact region being of a second conductivity type; and an anode region of a semiconductor material having a lower band-gap than the monocrystalline SiC, the anode region being in ohmic contact with the metallization and forming a heterojunction with the drift region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification