APPARATUS FOR RADIATION DETECTION IN A DIGITAL IMAGING SYSTEM

• US 20180329084A1
• Filed: 05/09/2018
• Published: 11/15/2018
• Est. Priority Date: 05/09/2017
• Status: Active Grant

• Current Assignee: KA Imaging, Inc.
• Original Assignee: KA Imaging, Inc.
• Inventors: KARIM, Karim S., GHANBARZADEH, Sina
• Granted Patent: US 10,514,471 B2
• Time in Patent Office: Days
• CPC Class Codes: G01T 1/241 Electrode arrangements, e.g. continuous or parallel strips or the like constructional or manufacturing details H01L31/00
• CPC Class Codes: G01T 1/247 Detector read-out circuitry for processing gain or off-set correction H04N
• CPC Class Codes: H01L 27/14663 Indirect radiation imagers, e.g. using luminescent members

Abstract

The disclosure is directed at a detector element that includes a conductive shield electrode, or shield electrode layer that can assist in reducing breakdown and also improve the reliability of the detector element. The detector element includes a substrate layer that supports at least two electrodes and a semiconducting layer. A shield electrode layer is deposited or patterned adjacent at least one of the two electrodes.

Claims

1. A detector element for a digital imaging system comprising:

a first electrode;

a second electrode;

a semiconducting layer, located between the first and second electrode; and

at least one conductive shielding electrode adjacent to one of the first or second electrode.

2. The detector element of claim 1 further comprising at least one blocking layer.

3. The detector element of claim 1 further comprising a substrate layer.

4. The detector element of claim 3 wherein the shielding electrode is adjacent the substrate layer.

5. The detector element of claim 3 wherein the shielding electrode is away from the substrate layer.

6. The detector element of claim 5 wherein the shielding electrode is transparent.

7. The detector element of claim 1 wherein the shielding electrode shapes an electric field near or around at least one of the first or second electrode.

8. The detector element of claim 1 wherein the shielding electrode layer shapes an electric field between the first and second electrode when the first and second electrode are horizontally spaced.

9. The detector element of claim 3 wherein the shielding electrode extends a width of the substrate layer.

10. The detector element of claim 1 wherein the shielding electrode is manufactured from a conductive material.

11. The detector element of claim 10 wherein the conductive material is aluminum, chrome, molybdenum or indium tin oxide.

12. The detector element of claim 1 wherein the semiconductor layer is manufactured from at least one of amorphous silicon, metal-oxide, polysilicon and an organic semiconductor material.

13. The detector element of claim 12 wherein the blocking layer is manufactured from at least one of polyimide, benzocyclobutane (BCB), parylene, polystyrene or polysiloxane.

14. The detector element of claim 1 wherein the detector element is a Metal-Insulator-Semiconductor-Insulator-Metal (MISIM) detector element.

15. The detector element of claim 2 further comprising an antireflective layer.

16. The detector element of claim 2 wherein the blocking layer is one of an insulating blocking layer, an ohmic blocking layer and a Schottky blocking layer.