×

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20180337055A1
  • Filed: 03/01/2018
  • Published: 11/22/2018
  • Est. Priority Date: 05/19/2017
  • Status: Active Grant
First Claim
Patent Images

1. A method of manufacturing a semiconductor device, comprising the steps of:

  • (a) depositing a metal oxide film having O and at least one of Hf and Zr as a main component over a semiconductor substrate;

    (b) depositing a conductor film over the metal oxide film; and

    (c) subjecting the metal oxide film to microwave heat treatment.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×