Systems and Methods for Annealing Semiconductor Structures
First Claim
1. A system comprising:
- a radiation source for generating first radiation;
an energy-converting structure disposed over a semiconductor structure, the energy-converting structure configured to convert first radiation into second radiation;
a second radiation reflecting structure positioned between the semiconductor structure and the energy-converting structure, wherein the second radiation reflecting structure reflects second radiation generated by the semiconductor structure back towards the semiconductor structure; and
a shell disposed over the energy-converting structure and under the semiconductor structure, the shell defining an opening through which the first radiation generated by the radiation source passes through.
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Abstract
Systems and methods are provided for annealing a semiconductor structure. In one embodiment, the method includes providing an energy-converting structure proximate a semiconductor structure, the energy-converting structure comprising a material having a loss tangent larger than that of the semiconductor structure; providing a heat reflecting structure between the semiconductor structure and the energy-converting structure; and providing microwave radiation to the energy-converting structure and the semiconductor structure. The semiconductor structure may include at least one material selected from the group consisting of boron-doped silicon germanium, silicon phosphide, titanium, nickel, silicon nitride, silicon dioxide, silicon carbide, n-type doped silicon, and aluminum capped silicon carbide. The heat reflecting structure may include a material substantially transparent to microwave radiation and having substantial reflectivity with respect to infrared radiation.
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Citations
20 Claims
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1. A system comprising:
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a radiation source for generating first radiation; an energy-converting structure disposed over a semiconductor structure, the energy-converting structure configured to convert first radiation into second radiation; a second radiation reflecting structure positioned between the semiconductor structure and the energy-converting structure, wherein the second radiation reflecting structure reflects second radiation generated by the semiconductor structure back towards the semiconductor structure; and a shell disposed over the energy-converting structure and under the semiconductor structure, the shell defining an opening through which the first radiation generated by the radiation source passes through. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A system comprising:
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a first energy-converting structure disposed over a semiconductor structure; a thermal radiation reflecting structure arranged between the first energy-converting structure and the semiconductor structure, the thermal radiation reflecting structure physically contacting the first energy-converting structure; and a radiation source for generating radiation toward the first energy-converting structure. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A method comprising:
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forming a thermal radiation reflecting structure directly on a first energy-converting structure; and providing radiation to the first energy-converting structure, wherein the thermal radiation reflecting structure is disposed between a semiconductor structure and the first energy-converting structure during the providing of the radiation to the first energy-converting structure. - View Dependent Claims (17, 18, 19, 20)
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Specification