DUAL CHANNEL CMOS HAVING COMMON GATE STACKS
2 Assignments
0 Petitions
Accused Products
Abstract
Embodiments are directed to a method and resulting structures for a dual channel complementary metal-oxide-semiconductor (CMOS) having common gate stacks. A first semiconductor fin is formed on a substrate. A second semiconductor fin is formed adjacent to the first semiconductor fin on the substrate. An oxide layer is formed over the first and second semiconductor fins and annealed at a temperature effective to increase a germanium concentration of the second semiconductor fin. The annealing process is selective to the second semiconductor fin and does not increase a germanium concentration of the first semiconductor fin.
-
Citations
25 Claims
-
1-16. -16. (canceled)
-
17. A semiconductor device, comprising:
-
a first semiconductor fin on a substrate; a second semiconductor fin adjacent to the first semiconductor fin on the substrate, said second semiconductor fin comprising a bottom portion, a middle portion, and a top portion; and a shared conductive gate formed over a channel region of the first and second semiconductor fins; wherein the middle portion comprises a first concentration of a first material and the top portion comprises a second concentration of the first material; wherein the second concentration is higher than the first concentration. - View Dependent Claims (18, 19, 20)
-
-
21. A dual channel complementary metal-oxide-semiconductor (CMOS), comprising:
-
a first semiconductor fin comprising silicon on a substrate; a second semiconductor fin adjacent to the first semiconductor fin on the substrate, said second semiconductor fin comprising a bottom portion, a middle portion, and a top portion; and a shared conductive gate formed over a channel region of the first and second semiconductor fins; wherein the bottom portion of the second semiconductor fin does not include germanium, the middle portion of the second semiconductor fin comprises a first concentration of germanium, and the top portion of the second semiconductor fin comprises a second concentration of germanium. - View Dependent Claims (22, 23, 24, 25)
-
Specification