THIN FILM TRANSISTOR

• US 20180337272A1
• Filed: 05/14/2018
• Published: 11/22/2018
• Est. Priority Date: 05/17/2017
• Status: Active Grant

• Current Assignee: Hon Hai Precision Industry Co., Ltd., Tsinghua University
• Original Assignee: Hon Hai Precision Industry Co., Ltd., Tsinghua University
• Inventors: WANG, JIANG-TAO, LIU, PENG, JIANG, KAI-LI, FAN, SHOU-SHAN
• Granted Patent: US 10,483,400 B2
• Time in Patent Office: Days
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 85/221 Carbon nanotubes

Abstract

A thin film transistor including: an insulating substrate; a gate electrode, located on the insulating substrate; a gate insulating layer, located on the gate electrode; a carbon nanotube structure, located on the gate insulating layer; wherein the carbon nanotube structure includes at least one carbon nanotube, the carbon nanotube includes two metallic carbon nanotube segments and one semiconducting carbon nanotube segment between the two metallic carbon nanotube segments, one of the metallic carbon nanotube segments is used as a source electrode, the other one of the metallic carbon nanotube segments is used as a drain electrode, the semiconducting carbon nanotube segment is used as a channel.

Claims

1. A thin film transistor comprising:

an insulating substrate;

a gate electrode, the gate electrode located on the insulating substrate;

a gate insulating layer, the gate insulating layer located on the gate electrode;

a carbon nanotube structure, the carbon nanotube layer located on the gate insulating layer;

wherein the carbon nanotube structure comprises a carbon nanotube, the carbon nanotube comprises a first metallic carbon nanotube segment, a second metallic carbon nanotube segment and a semiconducting carbon nanotube segment between the two metallic carbon nanotube segments, the first metallic carbon nanotube segment is used as a source electrode, the second metallic carbon nanotube segment is used as a drain electrode, the semiconducting carbon nanotube segment is used as a channel.

2. The thin film transistor as claimed in claim 1, further comprises a first metal electrode and a second electrode, the first metal electrode is located on the first metallic carbon nanotube segment, the second metal electrode is located on the second metallic carbon nanotube segment, the first metal electrode is used as the source electrode, the second metal electrode is used as the drain electrode.

3. The thin film transistor as claimed in claim 1, wherein the carbon nanotube structure comprises a plurality of carbon nanotubes, and the plurality of carbon nanotubes are combined with each other by Van der Waals force and extend along a same direction.

4. The thin film transistor as claimed in claim 1, wherein the first metallic carbon nanotube segment and the second metallic carbon nanotube segment and the semiconducting carbon nanotube segment in each carbon nanotube are connected by the Schottky barrier.

5. The thin film transistor as claimed in claim 1, wherein the carbon nanotube is a single-walled carbon nanotube, and a diameter of the single-walled carbon nanotube is less than 2 nanometers.

6. The thin film transistor as claimed in claim 5, wherein the diameter of the single-walled carbon nanotube is in a range of 1.2 nanometers to 1.5 nanometers.

7. A thin film transistor comprising:

an insulating substrate;

a carbon nanotube structure, the carbon nanotube structure located on the insulating substrate;

an insulating layer, the insulating layer located on the carbon nanotube structure;

a gate electrode, the gate electrode located on the insulating layer and insulated from the carbon nanotube structure;

wherein the carbon nanotube structure comprises a carbon nanotube, the carbon nanotube comprises a first metallic carbon nanotube segment, a second metallic carbon nanotube segment and a semiconducting carbon nanotube segment between the two metallic carbon nanotube segments, the first metallic carbon nanotube segment is used as a source electrode, the second metallic carbon nanotube segment is used as a drain electrode, the semiconducting carbon nanotube segment is used as a channel.

8. The thin film transistor as claimed in claim 7, further comprises a first metal electrode and a second electrode, the first metal electrode is located on the first metallic carbon nanotube segment, the second metal electrode is located on the second metallic carbon nanotube segment, the first metal electrode is used as a source electrode, the second metal electrode is used as a drain electrode.

9. The thin film transistor as claimed in claim 7, wherein the carbon nanotube structure comprises a plurality of carbon nanotubes, the plurality of carbon nanotubes are combined with each other by Van der Waals force and extend along a same direction.

10. The thin film transistor as claimed in claim 7, wherein the carbon nanotube is a single-walled carbon nanotube, the diameter of the single-walled carbon nanotube is less than 2 nanometers.

11. The thin film transistor as claimed in claim 10, wherein the diameter of the single-walled carbon nanotube is in a range of 1.2 nanometers to 1.5 nanometers.

12. A thin film transistor comprising:

a carbon nanotube structure, the carbon nanotube structure comprises a carbon nanotube, the carbon nanotube comprises a first metallic carbon nanotube segment, a second metallic carbon nanotube segment and one semiconducting carbon nanotube segment between the two metallic carbon nanotube segments, the first metallic carbon nanotube segment is used as a source electrode, the second metallic carbon nanotube segment is used as a drain electrode, the semiconducting carbon nanotube segment is used as a channel.

13. The thin film transistor as claimed in claim 12, further comprises a first metal electrode and a second electrode, the first metal electrode is located on the first metallic carbon nanotube segment, the second metal electrode is located on the second metallic carbon nanotube segment, the first metal electrode is used as a source electrode, the second metal electrode is used as a drain electrode.

14. The thin film transistor as claimed in claim 12, wherein the carbon nanotube structure comprises a plurality of carbon nanotubes, the plurality of carbon nanotubes are combined with each other by Van der Waals force and extend along a same direction.

15. The thin film transistor as claimed in claim 14, wherein lengths of metallic carbon nanotube segments are the same in the plurality of carbon nanotubes, and lengths of semiconducting carbon nanotube segments are the same in the plurality of carbon nanotubes.

16. The thin film transistor as claimed in claim 12, wherein the carbon nanotube is a single-walled carbon nanotube, the diameter of the single-walled carbon nanotube is less than 2 nanometers.

17. The thin film transistor as claimed in claim 12, wherein the diameter of the single-walled carbon nanotube is in a range of 1.2 nanometers to 1.5 nanometers.