LIGHT EMITTING DIODE WITH BRAGG REFLECTOR

• US 20180337310A1
• Filed: 07/30/2018
• Published: 11/22/2018
• Est. Priority Date: 02/17/2015
• Status: Abandoned Application

• Current Assignee: Genesis Photonics Inc.
• Original Assignee: Genesis Photonics Inc.
• Inventors: Huang, Yi-Ru, Chuang, Tung-Lin, Lan, Yan-Ting, Hsu, Sheng-Tsung, Shen, Chih-Ming, Huang, Jing-En, Lai, Teng-Hsien, Mai, Hung-Chuan, Huang, Kuan-Chieh, Ting, Shao-Ying
• Application Number:
  US16/049,771
• Publication Number:
  US 20180337310A1
• Time in Patent Office: Days
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.

Claims

1. A light emitting diode, comprising:

A semiconductor structure comprising;

a first-type semiconductor layer;

a second-type semiconductor layer; and

an emitting layer configured to emit a light beam, the light beam has a peak wavelength in a light emitting wavelength range, wherein the emitting layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer;

a first electrode and a second electrode disposed on a same side of the semiconductor structure and electrically connected to the first-type semiconductor layer and the second-type semiconductor layer, respectively;

a first insulating layer and a second insulating layer disposed on the semiconductor structure and exposing the first electrode and the second electrode; and

a Bragg reflector structure located between the first insulating layer and the second insulating layer, wherein a reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8(X) nm to 1.8(X) nm, wherein X is the peak wavelength of the light emitting wavelength range,

wherein the Bragg reflector structure comprises at least one primary stacked layer and at least one repair stacked layer, the at least one repair stacked layer is disposed between the primary stacked layer and one of the first insulating layer and the second insulating layer.

2. The light emitting diode as recited in claim 1, wherein the Bragg reflector structure comprises a plurality of first refractive layers and a plurality of second refractive layers, the first refractive layers and the second refractive layers are stacked alternately, and a refractive index of each of the first refractive layers is different from a refractive index of each of the second refractive layers.

3. The light emitting diode as recited in claim 2, wherein a material of each of the first refractive layers comprises tantalum pentoxide (Ta₂O₅), zirconium dioxide (ZrO₂), niobium pentoxide (Nb₂O₅), hafnium oxide (HfO₂), titanium dioxide (TiO₂), or combinations thereof.

4. The light emitting diode as recited in claim 2, wherein a material of each of the second refractive layers comprises combinations of silicon dioxide (SiO₂).

5. The light emitting diode as recited in claim 2, wherein a thickness of the first refractive layers and a thickness of the second refractive layers gradually change from one of the first insulating layer and the second insulating layer toward another of the first insulating layer and the second insulating layer.

6. The light emitting diode as recited in claim 1, wherein the first-type semiconductor layer comprises a first portion and a second portion, the emitting layer is stacked on the first portion, the second portion extends outward from the first portion to protrude from an area of the emitting layer, so as to electrically connect with the first electrode, wherein the first electrode, the emitting layer, the second-type semiconductor layer, and the second electrode are located on a first side of the first-type semiconductor layer.

7. The light emitting diode as recited in claim 1, further comprising a substrate, wherein the semiconductor structure is disposed on the substrate.

8. The light emitting diode as recited in claim 1, wherein the Bragg reflector structure comprises a plurality of through openings, and the second electrode is filled into the through openings to electrically connect with the second-type semiconductor layer.

9. The light emitting diode as recited in claim 8, further comprising a conductive layer disposed between the Bragg reflector structure and the second-type semiconductor layer, wherein the second electrode contacts the conductive layer by filling into the through openings.

10. The light emitting diode as recited in claim 9, further comprising a plurality of insulation patterns disposed between the conductive layer and the second-type semiconductor layer, the insulation patterns align the through openings such that an area of the conductive layer outside of the insulation patterns contacts the second-type semiconductor layer.

11. A light emitting diode, comprising:

A semiconductor structure comprising;

a first-type semiconductor layer;

a second-type semiconductor layer; and

an emitting layer configured to emit a light beam, the light beam has a peak wavelength in a light emitting wavelength range, wherein the emitting layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer;

a first electrode and a second electrode disposed on a same side of the semiconductor structure and electrically connected to the first-type semiconductor layer and the second-type semiconductor layer, respectively;

a first insulating layer and a second insulating layer disposed on the semiconductor structure and exposing the first electrode and the second electrode; and

a Bragg reflector structure located between the first insulating layer and the second insulating layer, wherein a reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8(X) nm to 1.8(X) nm, wherein X is the peak wavelength of the light emitting wavelength range,

wherein the Bragg reflector structure comprises a plurality of first refractive layers and a plurality of second refractive layers, the first refractive layers and the second refractive layers are stacked alternately, and a refractive index of each of the first refractive layers is different from a refractive index of each of the second refractive layers,

wherein a thickness of the first refractive layers and a thickness of the second refractive layers gradually change from one of the first insulating layer and the second insulating layer toward another of the first insulating layer and the second insulating layer.