LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

• US 20180337313A1
• Filed: 07/27/2018
• Published: 11/22/2018
• Est. Priority Date: 12/30/2015
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: CHENG, Ching-Tai, SHIH, Chun-Hua, RENN, Yih-Hua
• Granted Patent: US 10,522,721 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/483 Containers
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light-emitting device includes a light-emitting element, a wavelength conversion layer, a light pervious element and a light-reflecting enclosure. The light-emitting element includes a top surface, a bottom surface, and a side surface between the top surface and the bottom surface. The wavelength conversion layer covers the top surface of the light-emitting element, and includes a plurality of wavelength conversion particles having an equivalent particle diameter D50. The light pervious element includes a recess structure and an outer wall. The light-reflecting enclosure surrounds the outer wall. The D50 of the wavelength conversion particles is not great than 10 μm. The recess structure is laterally overlapped with the side surface of the light-emitting element and the wavelength conversion layer.

Claims

1. A light-emitting device, comprising:

a light-emitting element, comprising a top surface, a bottom surface, and a side surface between the top surface and the bottom surface;

a wavelength conversion layer, covering the top surface, and comprising a plurality of wavelength conversion particles with an equivalent particle diameter D50;

a light pervious element, comprising a recess structure and an outer wall, and disposed on the wavelength conversion layer; and

a light-reflecting enclosure surrounding the outer wall,

wherein the D50 is not great than 10 μ

m, and

wherein the recess structure is laterally overlapped with the side surface of the light-emitting element and the wavelength conversion layer.

2. The light-emitting device according to claim 1, wherein the light pervious element comprises a light pervious adhesive layer and a light pervious substrate.

3. The light-emitting device according to claim 1, wherein the light pervious element comprises an outermost surface coplanar with a top of the light-reflecting enclosure.

4. The light-emitting device according to claim 1, wherein the side surface is separated from the light-reflecting enclosure by the light pervious element.

5. The light-emitting device according to claim 1, wherein the light-reflecting enclosure comprising a slant plane.

6. The light-emitting device according to claim 1, wherein the wavelength conversion layer comprises a quantum dot luminescent material.

7. The light-emitting device according to claim 1, wherein the wavelength conversion layer comprises an upper section and a bottom section, and a difference between an average of particle sizes of the wavelength conversion particles in the upper section and an average of particle sizes of the wavelength conversion particles in the bottom section is smaller than 10%.

8. The light-emitting device according to claim 1, wherein the wavelength conversion layer comprises an extending portion extending outward the side surface.

9. The light-emitting device according to claim 1, wherein the wavelength conversion layer comprises a transparent binder.

10. The light-emitting device according to claim 9, wherein a weight percentage of the wavelength conversion particles to the wavelength conversion layer is less than 70%.

11. The light-emitting device according to claim 1, wherein the D50 of the wavelength conversion particles is in the range of 1 μ

m to 8 μ

m.

12. The light-emitting device according to claim 1, wherein the wavelength conversion layer has an average thickness, and a ratio of the average thickness to the D50 of the wavelength conversion particles is ranged from 6 to 20.

13. The light-emitting device according to claim 1, wherein the wavelength conversion layer has an average thickness, and a ratio of the average thickness to the D50 of the wavelength conversion particles is ranged from 8 to 15.