SUPER LONG CHANNEL DEVICE WITHIN VFET ARCHITECTURE
First Claim
Patent Images
1. A method for forming a semiconductor device, the method comprising:
- forming a pair of semiconductor fins on a substrate;
forming a semiconductor pillar between the semiconductor fins on the substrate;
forming a bottom doped region that extends under all of the semiconductor fins and under part of the semiconductor pillar; and
forming a conductive gate over a channel region of the semiconductor fins and the semiconductor pillar.
1 Assignment
0 Petitions
Accused Products
Abstract
Embodiments are directed to methods and resulting structures for a vertical field effect transistor (VFET) having a super long channel. A pair of semiconductor fins is formed on a substrate. A semiconductor pillar is formed between the semiconductor fins on the substrate. A region that extends under all of the semiconductor fins and under part of the semiconductor pillar is doped. A conductive gate is formed over a channel region of the semiconductor fins and the semiconductor pillar. A surface of the semiconductor pillar serves as an extended channel region when the gate is active.
-
Citations
17 Claims
-
1. A method for forming a semiconductor device, the method comprising:
-
forming a pair of semiconductor fins on a substrate; forming a semiconductor pillar between the semiconductor fins on the substrate; forming a bottom doped region that extends under all of the semiconductor fins and under part of the semiconductor pillar; and forming a conductive gate over a channel region of the semiconductor fins and the semiconductor pillar. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A method of operating a semiconductor device, the method comprising:
-
providing a semiconductor device comprising; a first semiconductor fin adjacent to a second semiconductor fin on a substrate; a semiconductor pillar formed between the first and second semiconductor fins on the substrate; a conductive gate formed over a channel region of the first and second semiconductor fins and the semiconductor pillar; a source region formed on a surface of the first semiconductor fin; and a drain region formed on a surface of the second semiconductor fin; and passing a current from the source region to the drain region through a portion of the semiconductor pillar. - View Dependent Claims (12, 13, 14)
-
-
15. A method for forming a semiconductor device, the method comprising:
-
forming a pair of semiconductor fins on a substrate; forming a semiconductor pillar between the semiconductor fins on the substrate, the semiconductor pillar recessed pillar below a surface of the semiconductor fins; forming a bottom doped region that extends under all of the semiconductor fins and under part of the semiconductor pillar; and forming a conductive gate over a channel region of the semiconductor fins and the semiconductor pillar; forming a thick oxide layer between the conductive gate and the semiconductor fins and the semiconductor pillar; forming a source region and a drain region on exposed surfaces of the semiconductor fins; and forming a shared gate contact on the conductive gate and over the semiconductor pillar. - View Dependent Claims (16, 17)
-
Specification