OXIDE LAYERS AND METHODS OF MAKING THE SAME

• US 20180350528A1
• Filed: 06/04/2018
• Published: 12/06/2018
• Est. Priority Date: 06/02/2017
• Status: Active Grant

• Current Assignee: Alliance For Sustainable Energy LLC
• Original Assignee: Alliance For Sustainable Energy LLC
• Inventors: Schulz, Philip, Berry, Joseph Jonathan, Dameron, Arrelaine Allen, Ndione, Paul Francois
• Granted Patent: US 10,879,012 B2
• Time in Patent Office: Days
• CPC Class Codes: H01G 9/0036 Formation of the solid electrolyte layer
• CPC Class Codes: H01G 9/2009 Solid electrolytes
• CPC Class Codes: H01G 9/2018 characterised by the ionic charge transport species, e.g. redox shuttles
• CPC Class Codes: H10K 2102/00 Constructional details relating to the organic devices covered by this subclass
• CPC Class Codes: H10K 2102/101 comprising transparent conductive oxides [TCO]
• CPC Class Codes: H10K 30/151 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
• CPC Class Codes: H10K 30/30 comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
• CPC Class Codes: H10K 30/50 Photovoltaic [PV] devices
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/162 using laser ablation
• CPC Class Codes: H10K 85/30 Coordination compounds
• CPC Class Codes: H10K 85/50 Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
• CPC Class Codes: Y02E 10/542 Dye sensitized solar cells
• CPC Class Codes: Y02E 10/549 Organic PV cells

Abstract

The present application discloses devices that includes a perovskite layer, a first layer that includes an oxide, and an interface layer, where the interface layer is positioned between the first layer and the perovskite layer, the interface layer is in physical contact with both the first layer and the perovskite layer, and the interface layer consists essentially of the oxide.

Claims

1. A device comprising:

a perovskite layer;

a first layer comprising an oxide; and

an interface layer, wherein;

the interface layer is positioned between the first layer and the perovskite layer,

the interface layer is in physical contact with both the first layer and the perovskite layer, and

the interface layer consists essentially of the oxide.

2. The device of claim 1, wherein the first layer has a thickness between 1 nm and 50 nm.

3. The device of claim 1, wherein the first layer is n-type.

4. The device of claim 1, wherein the first layer is free of oxy-halogen species.

5. The device of claim 1, further comprising a second layer comprising an oxide in physical contact with perovskite layer.

6. The device of claim 5, wherein the perovskite layer is positioned between the first layer and the second layer.

7. The device of claim 1, wherein the second layer is n-type.

8. The device of claim 5, further comprising a substrate, wherein the second layer is positioned between the perovskite layer and the substrate.

9. The device of claim 1, wherein the perovskite comprises at least one methyl ammonium lead iodide or formamidinium lead iodide.

10. The device of claim 1, wherein the oxide comprises at least one of TiO₂, NiO, ZnO, or MnO.

11. A method for producing an oxy-halogen-free oxide layer on a perovskite layer, wherein the method utilizes at least one atomic layer deposition or molecular layer deposition.