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SEMICONDUCTOR DEVICE AND METHOD

  • US 20180350693A1
  • Filed: 05/31/2017
  • Published: 12/06/2018
  • Est. Priority Date: 05/31/2017
  • Status: Active Grant
First Claim
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1. A method comprising:

  • performing multiple cycles of an atomic layer deposition (ALD) process, wherein the performing of one cycle includes;

    supplying a gas comprising SiH3N(C3H7)2 and O3 to a deposition chamber having a substrate to deposit a dielectric material over the substrate; and

    supplying an O2 plasma to the deposition chamber after the supplying of the gas;

    curing the deposited dielectric material using an ultra violet (UV) light; and

    annealing the deposited dielectric material after the curing.

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