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FinFET Device and Method of Forming and Monitoring Quality of the Same

  • US 20180350972A1
  • Filed: 07/31/2018
  • Published: 12/06/2018
  • Est. Priority Date: 10/20/2015
  • Status: Active Grant
First Claim
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1. A FinFET device, the FinFET device comprising:

  • a fin supported by a substrate; and

    a gate structure having two notch features individually in a first portion over the fin and a second portion overlapped with sidewalls of the fin, wherein a profile of the two notch features comprises;

    a first width at a top surface of the first portion;

    a second width at a top surface of the second portion;

    a third width at a middle position of the second portion;

    a fourth width at a bottom surface of the second portion;

    a first height from the first width to the second width;

    a second height from the second width to the third width; and

    a third height from the third width to the fourth width,wherein the third width is smaller than the second width and a difference between the third width and the second width is in a range between 0.001 nm and 25 nm; and

    the second height is in a range between 0.001 nm and 25 nm.

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