FinFET Device and Method of Forming and Monitoring Quality of the Same
First Claim
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1. A FinFET device, the FinFET device comprising:
- a fin supported by a substrate; and
a gate structure having two notch features individually in a first portion over the fin and a second portion overlapped with sidewalls of the fin, wherein a profile of the two notch features comprises;
a first width at a top surface of the first portion;
a second width at a top surface of the second portion;
a third width at a middle position of the second portion;
a fourth width at a bottom surface of the second portion;
a first height from the first width to the second width;
a second height from the second width to the third width; and
a third height from the third width to the fourth width,wherein the third width is smaller than the second width and a difference between the third width and the second width is in a range between 0.001 nm and 25 nm; and
the second height is in a range between 0.001 nm and 25 nm.
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Abstract
A FinFET structure with a gate structure having two notch features therein and a method of forming the same is disclosed. The FinFET notch features ensure that sufficient spacing is provided between the gate structure and source/drain regions of the FinFET to avoid inadvertent shorting of the gate structure to the source/drain regions. Gate structures of different sizes (e.g., different gate widths) and of different pattern densities can be provided on a same substrate and avoid inadvertent of shorting the gate to the source/drain regions through application of the notched features.
8 Citations
20 Claims
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1. A FinFET device, the FinFET device comprising:
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a fin supported by a substrate; and a gate structure having two notch features individually in a first portion over the fin and a second portion overlapped with sidewalls of the fin, wherein a profile of the two notch features comprises; a first width at a top surface of the first portion; a second width at a top surface of the second portion; a third width at a middle position of the second portion; a fourth width at a bottom surface of the second portion; a first height from the first width to the second width; a second height from the second width to the third width; and a third height from the third width to the fourth width, wherein the third width is smaller than the second width and a difference between the third width and the second width is in a range between 0.001 nm and 25 nm; and
the second height is in a range between 0.001 nm and 25 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A FinFET device, the FinFET device comprising:
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a fin supported by a substrate; and a first gate structure having two notch features individually in a first portion over the fin and a second portion overlapped with sidewalls of the fin, wherein a profile of the two notch features comprises; a first width at a top surface of the first portion; a second width at a top surface of the second portion; a third width at a middle position of the second portion; a fourth width at a bottom surface of the second portion; a first height from the first width to the second width; a second height from the second width to the third width; and a third height from the third width to the fourth width, wherein the third width is smaller than the second width and a difference between the third width and the second width is in a range between 0.001 nm and 15 nm; and
the second height is in a range between 0.001 nm and 50 nm, and further wherein the third height is about half the second height. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A FinFET device comprising:
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at least one fin extending in a first longitudinal direction; a gate structure extending in a second longitudinal direction perpendicular to the first longitudinal direction, the gate structure having a notched profile when viewed in cross-section along the first longitudinal direction, the notched profile including; a first portion extending above the at least one fin top surface, the first portion having a sidewall that slopes from a first width W1 at a top height to a second width W2 at a bottom height; and a second portion extending along a sidewall of the at least one fin, the second portion having a sidewall that slopes from the second width W2 at the top of the second portion to a third width W3 at a point a first distance H3 below the top of the second portion to a fourth width W4 at a point a second distance H2 below the top of the second portion; and wherein the following conditions are met by the profile of the gate structure;
W1>
W2>
W3,
H1>
H2,
H3=H2/2, and
0.067≤
H3/(W2−
W3)≤
25. - View Dependent Claims (19, 20)
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Specification