MAGNETIC EXCHANGE COUPLED MTJ FREE LAYER WITH DOUBLE TUNNEL BARRIERS HAVING LOW SWITCHING CURRENT AND HIGH DATA RETENTION
First Claim
1. A method of forming a magnetic tunnel junction (MTJ) storage element, the method comprising:
- forming a first reference layer having a first fixed magnetization direction;
forming a first tunnel barrier layer;
forming a composite free layer on an opposite side of the first tunnel barrier layer from the first reference layer;
forming a second tunnel barrier on an opposite side of the free layer from the first tunnel barrier; and
forming a second reference layer having a second fixed magnetization direction, where the second reference layer is on an opposite side of the second tunnel barrier from the free layer;
where forming the composite free layer comprises;
forming a first region comprising a first material configured to include a first switchable magnetization direction;
forming a second region comprising a second material configured to include a second switchable magnetization direction;
forming a first spacer material between the first region and the second region; and
configuring the first spacer material to provide magnetic exchange coupling between the first region and the second region.
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Accused Products
Abstract
Embodiments of the invention are directed to a magnetic tunnel junction (MTJ) storage element that includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The reference layer has a fixed magnetization direction. The free layer includes a first region, a second region and a third region. The third region is formed from a third material that is configured to magnetically couple the first region and the second region. The first region is formed from a first material having a first predetermined magnetic moment, and the second region is formed from a second material having a second predetermined magnetic moment. The first predetermined magnetic moment is lower that the second predetermined magnetic moment.
38 Citations
5 Claims
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1. A method of forming a magnetic tunnel junction (MTJ) storage element, the method comprising:
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forming a first reference layer having a first fixed magnetization direction; forming a first tunnel barrier layer; forming a composite free layer on an opposite side of the first tunnel barrier layer from the first reference layer; forming a second tunnel barrier on an opposite side of the free layer from the first tunnel barrier; and forming a second reference layer having a second fixed magnetization direction, where the second reference layer is on an opposite side of the second tunnel barrier from the free layer; where forming the composite free layer comprises; forming a first region comprising a first material configured to include a first switchable magnetization direction; forming a second region comprising a second material configured to include a second switchable magnetization direction; forming a first spacer material between the first region and the second region; and configuring the first spacer material to provide magnetic exchange coupling between the first region and the second region.
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2. A method of forming a magnetic tunnel junction (MTJ) storage element, the method comprising:
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forming a first reference layer having a first fixed magnetization direction; forming a first tunnel barrier layer; forming a composite free layer on an opposite side of the first tunnel barrier layer from the first reference layer; forming a second tunnel barrier on an opposite side of the free layer from the first tunnel barrier; and forming a second reference layer having a second fixed magnetization direction, where the second reference layer is on an opposite side of the second tunnel barrier from the free layer; where forming the composite free layer comprises; forming a first region comprising a first material configured to include a first switchable magnetization direction; forming a second region comprising a second material configured to include a second switchable magnetization direction; forming a third region comprising a third material configured to include a third switchable magnetization direction; forming a first spacer material between the first region and the second region, where the first spacer material is configured to provide magnetic exchange coupling between the first region and the second region; and forming a second spacer material between the second region and the third region, where the second spacer material is configured to provide magnetic exchange coupling between the second region and the third region.
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3. A method of operating a magnetic tunnel junction (MTJ) storage element, the method comprising:
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applying a write pulse having a predetermined magnitude to the MTJ storage element; where the MTJ storage element comprises; a first reference layer having a first fixed magnetization direction; a first tunnel barrier layer; a free layer on an opposite side of the first tunnel barrier layer from the first reference layer; a second tunnel barrier on an opposite side of the free layer from the first tunnel barrier; and a second reference layer having a second fixed magnetization direction, where the second reference layer is on an opposite side of the second tunnel barrier from the free layer; where the free layer comprises; a first region comprising a first material configured to include a first switchable magnetization direction; a second region comprising a second material configured to include a second switchable magnetization direction; and a first spacer material between the first region and the second region, where the first spacer material is configured to provide magnetic exchange coupling between the first region and the second region; based at least in part on receiving the write pulse, generating spin torque electrons in the first reference layer material, where the spin torque electrons generated in the first reference layer material are insufficient to initiate a process of switching the second switchable magnetization direction of the second region; and based at least in part on spin torque electrons being generated in the first reference layer material, initiating a process of switching the first switchable magnetization direction of the first region. - View Dependent Claims (4, 5)
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Specification