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MAGNETIC EXCHANGE COUPLED MTJ FREE LAYER WITH DOUBLE TUNNEL BARRIERS HAVING LOW SWITCHING CURRENT AND HIGH DATA RETENTION

  • US 20180358067A1
  • Filed: 11/03/2017
  • Published: 12/13/2018
  • Est. Priority Date: 06/07/2017
  • Status: Active Grant
First Claim
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1. A method of forming a magnetic tunnel junction (MTJ) storage element, the method comprising:

  • forming a first reference layer having a first fixed magnetization direction;

    forming a first tunnel barrier layer;

    forming a composite free layer on an opposite side of the first tunnel barrier layer from the first reference layer;

    forming a second tunnel barrier on an opposite side of the free layer from the first tunnel barrier; and

    forming a second reference layer having a second fixed magnetization direction, where the second reference layer is on an opposite side of the second tunnel barrier from the free layer;

    where forming the composite free layer comprises;

    forming a first region comprising a first material configured to include a first switchable magnetization direction;

    forming a second region comprising a second material configured to include a second switchable magnetization direction;

    forming a first spacer material between the first region and the second region; and

    configuring the first spacer material to provide magnetic exchange coupling between the first region and the second region.

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