PASTE FOR OHMIC CONTACT TO P-TYPE SEMICONDUCTOR AND METHOD FOR FORMING OHMIC CONTACT TO P-TYPE SEMICONDUCTOR USING THE SAME

• US 20180358146A1
• Filed: 05/29/2018
• Published: 12/13/2018
• Est. Priority Date: 06/13/2017
• Status: Active Grant

• Current Assignee: Korea Advanced Institute of Science and Technology
• Original Assignee: Korea Advanced Institute of Science and Technology
• Inventors: CHOI, Ji-Won, KIM, Jin Sang, KANG, Chong Yun, KIM, Seong Keun, BAEK, Seung Hyub, KIM, Sang Tae, LEE, Won Jae, PARMAR, Narendra Singh, LEE, Young-Shin
• Granted Patent: US 10,685,762 B2
• Time in Patent Office: Days
• CPC Class Codes: C08K 2003/2255 of molybdenum
• CPC Class Codes: C08K 2201/001 Conductive additives
• CPC Class Codes: C08K 3/22 of metals
• CPC Class Codes: C08L 29/04 Polyvinyl alcohol; Partially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
• CPC Class Codes: C09D 129/04 Polyvinyl alcohol; Partially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
• CPC Class Codes: H01B 1/22 the conductive material comprising metals or alloys
• CPC Class Codes: H01L 21/28512 on semiconductor bodies comprising elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 21/28575 on semiconductor bodies comprising AIIIBV compounds
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/452 on AIII-BV compounds

Abstract

The present disclosure relates to a paste for ohmic contact to p-type semiconductor, including a metal oxide and a binder, wherein the metal oxide is a rhenium oxide or a molybdenum oxide.

Claims

1. A paste for ohmic contact to p-type semiconductor, comprising:

a metal oxide and a binder,

wherein the metal oxide is a rhenium oxide or a molybdenum oxide.

2. The paste for ohmic contact to p-type semiconductor according to claim 1, wherein the rhenium oxide includes at least one selected from Re₂O, Re₂O₃, ReO₂, ReO₃ and Re₂O₇.

3. The paste for ohmic contact to p-type semiconductor according to claim 1, wherein the molybdenum oxide includes at least one selected from Mo₂O, Mo₂O₃, MoO₂, MoO₃ and Mo₂O₇.

4. The paste for ohmic contact to p-type semiconductor according to claim 1, wherein the binder is an inorganic or organic polymer compound.

5. The paste for ohmic contact to p-type semiconductor according to claim 4, wherein the organic polymer compound includes at least one selected from a vinyl-based polymer compound, a polyamide-based polymer compound and a polyurethane-based polymer compound.

6. The paste for ohmic contact to p-type semiconductor according to claim 5, wherein the vinyl-based polymer compound is polyvinylalcohol.

7. The paste for ohmic contact to p-type semiconductor according to claim 6, wherein the polyvinylalcohol is present in an amount ranging between 0.03 and 0.15 mL.

8. The paste for ohmic contact to p-type semiconductor according to claim 7, wherein the rhenium oxide is ReO₂, and the binder includes 0.15 mL of polyvinylalcohol.

9. The paste for ohmic contact to p-type semiconductor according to claim 7, wherein the molybdenum oxide is MoO₂, and the binder includes 0.10 mL of polyvinylalcohol.

10. A method for forming ohmic contact to p-type semiconductor, comprising:

applying the paste defined in claim 5 to a substrate;

drying the substrate; and

performing surface treatment of the substrate.

11. The method for forming ohmic contact to p-type semiconductor according to claim 10, wherein the performing surface treatment of the substrate comprises immersing in a solvent and boiling aqua regia.

12. The method for forming ohmic contact to p-type semiconductor according to claim 10, wherein the substrate is a GaN substrate.

13. The method for forming ohmic contact to p-type semiconductor according to claim 12, wherein the GaN substrate is flexible.