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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

  • US 20180358266A1
  • Filed: 06/09/2017
  • Published: 12/13/2018
  • Est. Priority Date: 06/09/2017
  • Status: Active Grant
First Claim
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1. A method for fabricating semiconductor device, comprising:

  • providing a substrate having a first region and a second region;

    forming a first fin-shaped structure on the first region;

    forming a shallow trench isolation (STI) around the first fin-shaped structure;

    after forming the STI performing an in-situ steam generation (ISSG) process to form a first oxide layer on the first fin-shaped structure so that the first oxide layer covers a top surface and sidewalls of the first fin-shaped structure without extending to a top surface of the STI; and

    forming a second oxide layer on and directly contacting the first oxide layer and the STI.

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