METHOD OF MAKING A LIGHT EMITTING DIODE ARRAY ON A BACKPLANE

• US 20180366450A1
• Filed: 12/17/2015
• Published: 12/20/2018
• Est. Priority Date: 12/19/2014
• Status: Active Grant

• Current Assignee: GLO Technologies LLC
• Original Assignee: Anusha Pokhriyal, Daniel Thompson, Nathan Gardner
• Inventors: GARDNER, Nathan, KISH JR., Fredrick A., MODRIC, Miljenko, POKHRIYAL, Anusha, THOMPSON, Daniel, DANESH, Fariba
• Granted Patent: US 10,304,810 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68322 Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13109 Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/13111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/81 using a bump connector
• CPC Class Codes: H01L 2224/81001 involving a temporary auxiliary member not forming part of the bonding apparatus
• CPC Class Codes: H01L 2224/95 at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A backplane optionally having stepped horizontal surfaces and optionally embedding metal interconnect structures is provided. First conductive bonding structures are formed on first stepped horizontal surfaces. First light emitting devices on a first transfer substrate are disposed on the first conductive bonding structures, and a first subset of the first light emitting devices is bonded to the first conductive bonding structures. Laser irradiation can be employed to selectively disconnect the first subset of the first light emitting devices from the first transfer substrate while a second subset of the first light emitting devices remains attached to the first transfer substrate. Additional devices on each additional transfer substrate can be bonded to additional conductive bonding structures on the backplane employing the same method provided that the additional devices are not present in positions that would overlap with pre-existing first light emitting devices or devices on the backplane at a bonding position.

Claims

1. A method of forming an integrated light emitting device assembly, comprising:

forming first conductive bonding structures on a top side of a backplane;

disposing an assembly comprising a first transfer substrate and first light emitting devices that emit light of a first wavelength on the backplane, wherein a first subset of the first light emitting devices contacts the first conductive bonding structures and a second subset of the first light emitting devices does not contact any conductive bonding structure;

bonding the first subset of the first light emitting devices to the first conductive bonding structures; and

separating an assembly comprising the first transfer substrate and the second subset of the first light emitting devices from the backplane while the first subset of the first light emitting devices remains bonded to the first conductive bonding structures.

2. The method of claim 1, further comprising:

forming second conductive bonding structures on the top side of the backplane after separating the assembly of the first transfer substrate and the second subset of the first light emitting devices from the backplane;

providing an assembly comprising a second transfer substrate and second light emitting devices, wherein the second light emitting devices emit light of a second wavelength that is different from the first wavelength, and the second light emitting devices are not present in positions that correspond to positions over the backplane at which the first subset of the first light emitting devices is present in a configuration in which the second light emitting devices face the top side of the backplane; and

disposing the assembly comprising the second transfer substrate and the second light emitting devices on the backplane, wherein a first subset of the second light emitting devices contacts the second conductive bonding structures and a second subset of the second light emitting devices does not overlie the second conductive bonding structures.

3. The method of claim 2, wherein the backplane is provided with stepped horizontal surfaces at a top side, the stepped horizontal surfaces comprising:

a first subset of the stepped horizontal surfaces located within a first horizontal surface plane; and

a second subset of the stepped horizontal surfaces located within a second horizontal surface plane that is more proximal to a backside surface of the backplane than the first subset of stepped horizontal surfaces,

wherein;

the first conductive bonding structures are formed on the first subset of the stepped horizontal surfaces; and

the second conductive bonding structures are formed on the second subset of the stepped horizontal surfaces.

4. The method of claim 2, further comprising:

bonding the first subset of the second light emitting devices to the second conductive bonding structures while the second subset of the second light emitting devices is not bonded to any structure on the backplane; and

separating an assembly comprising the second transfer substrate and the second subset of the second light emitting devices from the backplane while the first subset of the second light emitting devices remains bonded to the second conductive bonding structures.

5. The method of claim 4, further comprising:

forming third conductive bonding structures on the top side of the backplane after separating the assembly of the second transfer substrate and the second subset of the second light emitting devices from the backplane;

providing an assembly comprising a third transfer substrate and third light emitting devices, wherein the third light emitting devices emit light of a third wavelength that is different from the first and second wavelengths, and the third light emitting devices are not present in positions that correspond to positions over the backplane at which the first subset of the first light emitting devices and the first subset of the second light emitting devices are present in a configuration in which the third light emitting devices face the top side of the backplane; and

disposing the assembly comprising the third transfer substrate and the third light emitting devices on the backplane, wherein a first subset of the third light emitting devices contacts the third conductive bonding structures and a second subset of the third light emitting devices does not overlie the third conductive bonding structures.

6. The method of claim 5, wherein the backplane is provided with stepped horizontal surfaces at a top side, the stepped horizontal surfaces comprising:

a first subset of the stepped horizontal surfaces located within a first horizontal surface plane;

a second subset of the stepped horizontal surfaces located within a second horizontal surface plane that is more proximal to a backside surface of the backplane than the first subset of stepped horizontal surfaces is to the backside surface of the backplane; and

a third subset of the stepped horizontal surfaces located within a third horizontal surface plane that is more proximal to the backside surface of the backplane than the second subset of stepped horizontal surfaces is to the backside surface of the backplane,

wherein;

the first conductive bonding structures are formed on the first subset of the stepped horizontal surfaces; and

the second conductive bonding structures are formed on the second subset of the stepped horizontal surfaces; and

the third conductive bonding structures are formed on the third subset of the stepped horizontal surfaces.

7. The method of claim 5, further comprising:

bonding the first subset of the third light emitting devices to the third conductive bonding structures while the second subset of the third light emitting devices is not bonded to any structure on the backplane; and

separating an assembly comprising the third transfer substrate and the second subset of the third light emitting devices from the backplane while the first subset of the third light emitting devices remains bonded to the third conductive bonding structures.

8. The method of claim 4, wherein a first horizontal interfacial plane including interfaces between the first subset of the first light emitting devices and the first conductive bonding structures is more distal from the second horizontal surface plane than a second horizontal interface plane between the first subset of the second light emitting devices and the second conductive bonding structures.

9. The method of claim 1, further comprising:

forming additional conductive bonding structures on the top side of the backplane after separating the assembly of the first transfer substrate and the second subset of the first light emitting devices from the backplane;

providing an assembly comprising an additional transfer substrate and sensor devices, wherein the sensor devices are not present in positions that correspond to positions over the backplane at which the first subset of the first light emitting devices is present in a configuration in which the sensor devices face the top side of the backplane; and

disposing the assembly comprising the additional transfer substrate and the sensor devices on the backplane, wherein a first subset of the sensor devices contacts the additional conductive bonding structures and a second subset of the sensor devices does not overlie any of the additional conductive bonding structures.

10. The method of claim 9, further comprising:

bonding the first subset of the sensor devices to the additional conductive bonding structures while the second subset of the sensor devices is not bonded to any structure on the backplane; and

separating an assembly comprising the additional transfer substrate and the second subset of the sensor devices from the backplane while the first subset of the sensor devices remains bonded to the additional conductive bonding structures.

11. The method of claim 1, wherein the assembly comprising the first transfer substrate and the first light emitting devices further comprises:

a release layer contacting the first transfer substrate and comprising a material that absorbs light at a wavelength selected from ultraviolet range, visible range, and infrared range; and

a bonding material layer contacting the release layer and the first light emitting devices.

12. The method of claim 11, further comprising removing first portions of the release layer that overlies the first subset of the first light emitting devices selectively, while second portions of the release layer that overlies the second subset of the first light emitting devices are not removed.

13. The method of claim 11, wherein the first transfer substrate comprises a material that is optically transparent at a laser wavelength, and the method further comprises irradiating the first portions of the release layer with a laser beam having the laser wavelength.

14. The method of claim 13, wherein:

the release layer comprises silicon nitride;

the laser wavelength is a ultraviolet wavelength; and

irradiating the first portions of the release layer with the laser beam ablates the first portions of the release layer.

15. The method of claim 13, wherein a remnant portion of the bonding material layer is formed on at least one of the first subset of the first light emitting devices after the first portions of the release layer are irradiated with the laser beam.

16. The method of claim 11, further comprising:

providing a carrier substrate on which the first light emitting devices are attached;

depositing a first bonding material layer on the carrier substrate;

providing a stacked structure including a stack of the first transparent substrate, the release layer, and a second bonding material layer; and

bonding the second bonding material layer with the first bonding material layer to form the bonding material layer, wherein the assembly comprising the first transfer substrate, the release layer, the bonding material layer, and the first light emitting devices is formed.

17. The method of claim 1, wherein the first conductive bonding structures have a lesser height than the second conductive bonding structures.

18. The method of claim 1, wherein:

the backplane comprises metal interconnect structures embedded within a dielectric material matrix; and

the conductive bonding structures are electrically connected to a respective metal interconnect structure within the backplane upon forming of the conductive bonding structures.

19. The method of claim 1, further comprising encapsulating the first subset of the first light emitting devices with a transparent encapsulation dielectric layer by depositing the transparent encapsulation dielectric layer over the backplane after separating the assembly comprising the first transfer substrate and the second subset of the first light emitting devices.

20. The method of claim 19, further comprising forming conductive interconnect structures within the transparent encapsulation dielectric layer, wherein the conductive interconnect structures electrically contact a respective light emitting device among the first subset of the first light emitting devices.

21. A method of forming at least one integrated light emitting device assembly, comprising:

disposing a first assembly comprising a first source substrate and first light emitting devices that emit light of a first wavelength over a backplane, wherein first conductive bonding structures are disposed between the backplane and the first assembly;

bonding a first subset of the first light emitting devices to the backplane through the first conductive bonding structures;

detaching the first subset of the first light emitting devices from the first source substrate by laser ablation of material portions overlying the first subset of the first light emitting devices; and

separating an assembly comprising the first source substrate and a second subset of the first light emitting devices from the backplane while the first subset of the first light emitting devices remains bonded to the backplane.

22. The method of claim 21, further comprising:

providing a second assembly comprising a second source substrate and second light emitting devices, wherein the second light emitting devices emit light of a second wavelength that is different from the first wavelength, and the second light emitting devices are not present in vacancy positions that form a first pattern; and

disposing the second assembly comprising the second source substrate and the second light emitting devices over the backplane, wherein;

second conductive bonding structures are disposed between the backplane and the second assembly; and

the vacancy positions of the first pattern overlie all areas of the first light emitting devices that are bonded to the backplane when the second assembly is disposed over the backplane.

23. The method of claim 22, further comprising:

bonding a first subset of the second light emitting devices to the backplane through the second conductive bonding structures;

detaching the first subset of the second light emitting devices from the second source substrate by laser ablation of material portions overlying the first subset of the second light emitting devices; and

separating an assembly comprising the second source substrate and a second subset of the second light emitting devices from the backplane while the first subset of the second light emitting devices remains bonded to the backplane.

24. The method of claim 23, further comprising:

providing a third assembly comprising a third source substrate and third light emitting devices, wherein the third light emitting devices emit light of a third wavelength that is different from the first wavelength and from the second wavelength, and the third light emitting devices are not present in vacancy positions that form a second pattern; and

disposing the third assembly comprising the third source substrate and the third light emitting devices over the backplane, wherein;

third conductive bonding structures are disposed between the backplane and the third assembly; and

the vacancy positions in the second pattern overlie all areas of the first and second light emitting devices that are bonded to the backplane when the third assembly is disposed over the backplane.

25. The method of claim 24, further comprising:

bonding a first subset of the third light emitting devices to the backplane through the third conductive bonding structures;

detaching the first subset of the third light emitting devices from the third source substrate by laser ablation of material portions overlying the first subset of the third light emitting devices; and

separating an assembly comprising the third source substrate and a second subset of the third light emitting devices from the backplane while the first subset of the third light emitting devices remains bonded to the backplane.

26. The method of claim 22, wherein:

first bonding pads and second bonding pads are provided on the backplane;

the first conductive bonding structures overlie the first bonding pads and the second conductive bonding structures overlie the second bonding pads when the first assembly is disposed over the backplane; and

the first conductive bonding structures are bonded to the first subset of the first light emitting devices and to the first bonding pads when the first subset of the first light emitting devices are bonded to the backplane.

27. The method of claim 26, wherein one set of structures selected from the second bonding pads and the second subset of the first light emitting devices does not physically contact the second conductive bonding structures when the first subset of the first light emitting devices are bonded to the backplane.

28. The method of claim 26, wherein the first conductive bonding structures are bonded to the first bonding pads and the second conductive bonding structures are bonded to the second bonding pads before the first subset of the first light emitting devices are bonded to the backplane.

29. The method of claim 26, wherein each of the first conductive bonding structures is bonded to a respective first light emitting device before the first subset of the first light emitting devices are bonded to the backplane.

30. The method of claim 26, wherein:

proximal surfaces of the first light emitting diodes are within a horizontal plane when the first assembly is disposed over the backplane; and

the first bonding pads are more proximal to the horizontal plane than the second bonding pads are to the horizontal plane when the first assembly is disposed over the backplane.

31. The method of claim 30, wherein the first bonding pads have a greater thickness than the second bonding pads.

32. The method of claim 30, wherein backside surfaces of the first bonding pads are vertically spaced from the horizontal plane by a lesser separation distance than backside surfaces of the second bonding pads are from the horizontal plane when the first assembly is disposed over the backplane.

33. The method of claim 30, wherein the backplane has stepped surfaces having a different separation distance from a planar backside surface of the backplane, and the first bonding pads are located on a different stepped surface than the second bonding pads.

34. The method of claim 21, wherein the first subset of the first light emitting devices is detached from the first source substrate one at a time by sequential irradiation of a laser beam to each first light emitting devices in the first subset.

35. The method of claim 26, wherein:

the first bonding pads and second bonding pads have a same thickness; and

the first conductive bonding structures have a greater height than the second conductive bonding structures upon formation thereof.

36. The method of claim 26, wherein the second bonding pads and the second subset of the first light emitting devices are in physically contact with the second conductive bonding structures when the first subset of the first light emitting devices are bonded to the backplane.

37. The method of claim 26, wherein the first conductive bonding structures are bonded to an underlying first bonding pad and an overlying first light emitting device by irradiation by a laser beam that selectively heats each first conductive bonding structure.

38. The method of claim 37, wherein one set of structures selected from the second bonding pads and the second subset of the first light emitting devices is not bonded to the second conductive bonding structures when the first subset of the first light emitting devices are bonded to the backplane.

39. The method of claim 36, wherein the first conductive bonding structures are bonded to an underlying first bonding pad and an overlying first light emitting device by uniformly heating the first conductive bonding structures.

40. The method of claim 39, wherein the second conductive bonding structures are bonded to the second bonding pads and to the second subset of the first light emitting devices when the first subset of the first light emitting devices are bonded to the backplane.

41. The method of claim 40, further comprising separating each of the second conductive bonding structures into two portions while separating the assembly comprising the first source substrate and a second subset of the first light emitting devices from the backplane, wherein the two portions comprise:

an upper portion bonded to a respective first light emitting device within the second set; and

a lower portion bonded to a respective second bonding pad.

42. The method of claim 41, wherein:

the first subset of the first light emitting devices are bonded to the first bonding pad and the second subset of the first light emitting devices are bonded to the second bonding pad simultaneously at a reflow temperature;

the laser ablation is performed at a temperature lower than the reflow temperature; and

the assembly comprising the first source substrate and the second subset of the first light emitting devices is separated from the backplane at a separation temperature.

43. The method of claim 26, further comprising pushing the first subset of the first light emitting devices closer to the backplane while reflowing the first conductive bonding structures after the assembly comprising the first source substrate and the second subset of the first light emitting devices is separated from the backplane.

44. The method of claim 43, wherein a vertical pushing distance during the pushing of the first subset of the first light emitting devices is greater than a maximum height among gaps between the second conductive bonding structures and structures selected from overlying first light emitting diodes and underlying second bonding pads.

45. The method of claim 21, further comprising:

providing an additional assembly comprising another source substrate and sensor devices, wherein the sensor devices are not present in vacancy positions that form another pattern; and

disposing the additional assembly comprising the additional source substrate and the sensor devices over the backplane, wherein;

additional conductive bonding structures are disposed between the backplane and the additional assembly; and

the vacancy positions in the additional pattern overlie all areas of the first light emitting devices that are bonded to the backplane when the additional assembly is disposed over the backplane.

46. The method of claim 45, further comprising:

bonding a first subset of the sensor devices to the backplane through the additional conductive bonding structures;

detaching the first subset of the sensor devices from the additional source substrate by laser ablation of material portions overlying the first subset of the sensor devices; and

separating an assembly comprising the additional source substrate and a second subset of the sensor devices from the backplane while the first subset of the sensor devices remains bonded to the backplane.

47. The method of claim 21, wherein:

first bonding pads are provided on the backplane; and

each of the first conductive bonding structures is bonded to a respective first bonding pad and a respective first light emitting device in the first subset when the first subset of the first light emitting devices are bonded to the backplane.

48. The method of claim 47, wherein:

second conductive bonding structures are disposed between the second subset of the first light emitting devices and second bonding pads located on the backplane at a time of bonding the first subset of the first light emitting diodes to the backplane; and

each second bonding structure is bonded to one of an overlying first light emitting device within the second subset and an underlying second bonding pad, and does not physically contact another of the overlying first light emitting device within the second subset and the underlying second bonding pad.

49. The method of claim 21, wherein the backplane is provided with stepped horizontal surfaces at a top side, the stepped horizontal surfaces comprising:

a first subset of the stepped horizontal surfaces located within a first horizontal surface plane; and

a second subset of the stepped horizontal surfaces located within a second horizontal surface plane that is more proximal to a planar backside surface of the backplane than the first subset of stepped horizontal surfaces is to the planar backside surface of the backplane, wherein;

the first conductive bonding structures are formed at the first subset of the stepped horizontal surfaces; and

the second conductive bonding structures are formed at the second subset of the stepped horizontal surfaces.

50. The method of claim 49, wherein:

the stepped horizontal surfaces comprise a third subset of the stepped horizontal surfaces is located within a third horizontal surface plane that is more proximal to the backside surface of the backplane than the second subset of stepped horizontal surfaces is to the backside surface of the backplane; and

third conductive bonding structures are formed at the third subset of the stepped horizontal surfaces.

51. The method of claim 21, wherein the first assembly comprising the first source substrate and the first light emitting devices further comprises:

a release layer contacting the first source substrate and comprising a material that absorbs light at a wavelength selected from ultraviolet range, visible range, and infrared range; and

a bonding material layer contacting the release layer and the first light emitting devices.

52. The method of claim 51, further comprising removing first portions of the release layer that overlie the first subset of the first light emitting devices selectively, while second portions of the release layer that overlie the second subset of the first light emitting devices are not removed.

53. The method of claim 52, wherein:

the release layer comprises silicon nitride;

the laser wavelength is a ultraviolet wavelength; and

irradiating the first portions of the release layer with the laser beam ablates the first portions of the release layer.

54. The method of claim 21, wherein:

the first source substrate is an upper portion of a growth substrate on which the first light emitting devices are fabricated; and

the first source substrate is provided by separating the upper portion of the growth substrate from a lower portion of the growth substrate.

55. The method of claim 54, wherein the growth substrate comprises a III-V compound semiconductor material.

56. The method of claim 21, wherein the integrated light emitting device assembly comprises an emissive display panel containing light emitting diodes that emit three or more different colors.

57. The method of claim 56, wherein the emissive display panel comprises a direct view display panel containing red, green and blue wavelength light emitting diodes and sensors bonded to the backplane.