SEMICONDUCTOR STRUCTURES
First Claim
1. A semiconductor structure, comprising:
- a semiconductor substrate including fin structures, the fin structures including a plurality of first fin structures having a first width and a plurality of second fin structures, wherein;
the second fin structure has a second width at a lower potion and a third width at an upper portion, andthe second width is greater than each of the first width and the third width; and
a first isolation film formed on the semiconductor substrate and between adjacent fin structures, wherein;
the first isolation film has a top surface lower than the fin structures, andthe upper portion of each second fin structure having the third width passes through the top surface of the first isolation film.
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Abstract
Semiconductor structure is provided. An exemplary semiconductor structure includes a semiconductor substrate including fin structures. The fin structures include a plurality of first fin structures having a first width and a plurality of second fin structures. The second fin structure has a second width at a lower potion and a third width at an upper portion, and the second width is greater than each of the first width and the third width. The semiconductor structure includes a first isolation film formed on the semiconductor substrate and between adjacent fin structures. The first isolation film has a top surface lower than the fin structures. The upper portion of each second fin structure having the third width passes through the top surface of the first isolation film.
23 Citations
10 Claims
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1. A semiconductor structure, comprising:
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a semiconductor substrate including fin structures, the fin structures including a plurality of first fin structures having a first width and a plurality of second fin structures, wherein; the second fin structure has a second width at a lower potion and a third width at an upper portion, and the second width is greater than each of the first width and the third width; and a first isolation film formed on the semiconductor substrate and between adjacent fin structures, wherein; the first isolation film has a top surface lower than the fin structures, and the upper portion of each second fin structure having the third width passes through the top surface of the first isolation film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification