ETCHING COMPOSITIONS AND METHOD OF ETCHING BY USING THE SAME
First Claim
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1. An etching composition comprising:
- phosphoric acid; and
a compound represented by Formula. 1,
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Abstract
The present invention relates to an etching composition, an etching method, and a method of preparing a semiconductor device using the same, and more particularly, to an etching composition comprising a compound capable of selectively removing a nitride film with a high selectivity while minimizing an etch rate of the oxide film, and a method of preparing a semiconductor device comprising an etching process using the etching composition.
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Citations
7 Claims
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1. An etching composition comprising:
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phosphoric acid; and a compound represented by Formula. 1, - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification