Array Substrate and Manufacturing Method Thereof, Display Panel and Display Device

• US 20190011772A1
• Filed: 08/17/2017
• Published: 01/10/2019
• Est. Priority Date: 11/14/2016
• Status: Active Grant

• Current Assignee: BOE Technology Group Co., Ltd.
• Original Assignee: BOE Technology Group Co., Ltd.
• Inventors: Yao, Qi, Cao, Zhanfeng, Zhang, Feng, Li, Haixu, Ban, Shengguang, Liu, Yingwei
• Granted Patent: US 10,209,558 B2
• Time in Patent Office: Days
• CPC Class Codes: G02F 1/133528 Polarisers
• CPC Class Codes: G02F 1/133531 characterised by the arrangement of polariser or analyser axes
• CPC Class Codes: G02F 1/133565 inside the LC elements, i.e. between the cell substrates
• CPC Class Codes: G02F 1/133567 on the back side
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/13685 Top gates
• CPC Class Codes: G02F 2202/104 poly-Si
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02592 amorphous
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/32134 by liquid etching only
• CPC Class Codes: H01L 21/32139 using masks
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/1262 with a particular formation, treatment or coating of the substrate
• CPC Class Codes: H01L 27/1274 using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/66757 : Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78633 : with a light shield
• CPC Class Codes: H01L 29/78675 : with normal-type structure, e.g. with top gate

Abstract

An array substrate and a manufacturing method thereof, and a display device are provided. The array substrate includes: a base substrate, an active layer, and a first polarization structure. The active layer is disposed on the base substrate; the first polarization structure is disposed on a side of the active layer facing the base substrate, and an orthographic projection of the first polarization structure on the base substrate is at least partially overlapped with an orthographic projection of the active layer on the base substrate.

Claims

1. An array substrate, comprising:

a base substrate;

an active layer, disposed on the base substrate;

a first polarization structure, disposed on a side of the active layer facing the base substrate, and an orthographic projection of the first polarization structure on the base substrate being at least partially overlapped with an orthographic projection of the active layer on the base substrate;

a second polarization structure, laminated on the base substrate, and disposed on the side of the active layer facing the base substrate,

wherein a polarization direction of the first polarization structure is substantially perpendicular to a polarization direction of the second polarization structure, and both of the orthographic projections of the active layer and the first polarization structure on the base substrate fall within an orthographic projection of the second polarization structure on the base substrate.

2. The array substrate of claim 1, wherein the first polarization structure is provided between the base substrate and the active layer.

3. The array substrate of claim 1, wherein the orthographic projection of the active layer on the base substrate falls within the orthographic projection of the first polarization structure on the base substrate.

4. The array substrate of claim 3, wherein the orthographic projection of the active layer on the base substrate substantially coincides with the orthographic projection of the first polarization structure on the base substrate.

5. The array substrate of claim 1, wherein a thickness of the first polarization structure is 50 Å

-100 Å

.

6. The array substrate of claim 1, wherein a material of the first polarization structure comprises metal or resin containing conductive material.

7. The array substrate of claim 1, wherein the first polarization structure has a nano-sized grating pattern.

9. The array substrate of claim 1, wherein the second polarization structure is provided between the base substrate and the active layer.

10. The array substrate of claim 1, wherein the second polarization structure has a nano-sized grating pattern.

11. The array substrate of claim 1, further comprising:

a buffer layer, disposed between the first polarization structure and the active layer.

8. (canceled)

12. A manufacturing method of an array substrate, comprising:

forming a polarization layer on a base substrate;

forming a semiconductor layer on the base substrate;

patterning the polarization layer and the semiconductor layer, the patterned semiconductor layer forming an active layer, the patterned polarization layer forming a first polarization structure, and an orthographic projection of the first polarization structure on the base substrate being at least partially overlapped with an orthographic projection of the active layer on the base substrate;

forming a second polarization structure on a side of the active layer facing the base substrate,

wherein a polarization direction of the first polarization structure is substantially perpendicular to a polarization direction of the second polarization structure, and both of the orthographic projections of the active layer and the first polarization structure on the base substrate fall within an orthographic projection of the second polarization structure on the base substrate.

13. The method of manufacturing the array substrate of claim 12, wherein the semiconductor layer is formed on a side of the polarization layer far away from the base substrate.

14. The manufacturing method of the array substrate of claim 13, wherein the polarization layer and the semiconductor layer are patterned by one patterning process.

15. The manufacturing method of the array substrate of claim 12, wherein a thickness of the first polarization structure is 50 Å

-100 Å

.

16. The manufacturing method of the array substrate of claim 12, wherein a material of the first polarization structure comprises metal or resin containing conductive material.

17. The manufacturing method of the array substrate of claim 12, wherein the first polarization structure has a nano-sized grating pattern.

18. The manufacturing method of the array substrate of claim 17, wherein the first polarization structure having the nano-sized grating pattern is formed by a nano-imprinting method.

21. The manufacturing method of the array substrate of claim 12, wherein the second polarization structure is formed between the active layer and the base substrate.

22. The manufacturing method of the array substrate of claim 12, wherein the second polarization is formed by a nano-imprinting method, and the second polarization structure has a nano-sized grating pattern.

19-20. -20. (canceled)

23. A display panel, comprising the array substrate and a second polarization structure on the side of the active layer facing the base substrate,

wherein the array substrate comprises:

a base substrate;

an active layer, disposed on the base substrate;

a first polarization structure, disposed on a side of the active layer facing the base substrate, and an orthographic projection of the first polarization structure on the base substrate being at least partially overlapped with an orthographic projection of the active layer on the base substrate,

wherein a polarization direction of the first polarization structure is substantially perpendicular to a polarization direction of the second polarization structure, and both of the orthographic projections of the active layer and the first polarization structure on the base substrate fall within an orthographic projection of the second polarization structure on the base substrate.

24-25. -25. (canceled)