TIE-HIGH AND TIE-LOW CIRCUITS
First Claim
1. A tie-high circuit, comprising:
- a p-type metal-oxide-semiconductor (PMOS) transistor connected to a power rail in a standard cell library; and
a decoupling capacitor connected to a ground rail in the standard cell library and the PMOS transistor,wherein the decoupling capacitor comprises an n-type metal-oxide-semiconductor (NMOS) transistor having a source and a drain, either one of the source and the drain of the NMOS transistor being connected to the ground rail via an active resistor.
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Accused Products
Abstract
A tie-high circuit includes: a p-type metal-oxide-semiconductor (PMOS) transistor connected to a power rail in a standard cell library; and a decoupling capacitor connected to a ground rail in the standard cell library and the PMOS transistor, wherein the decoupling capacitor comprises an n-type metal-oxide-semiconductor (NMOS) transistor having a source and a drain, either one of the source and the drain of the NMOS transistor being connected to the ground rail via an active resistor. A tie-low circuit includes: an n-type metal-oxide-semiconductor (NMOS) transistor connected to a ground rail in a standard cell library; and a decoupling capacitor connected to a power rail in the standard cell library and the NMOS transistor, wherein the decoupling capacitor comprises a p-type metal-oxide-semiconductor (PMOS) transistor having a source and a drain, either one of the source and the drain of the PMOS transistor being connected to the power rail via an active resistor.
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Citations
10 Claims
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1. A tie-high circuit, comprising:
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a p-type metal-oxide-semiconductor (PMOS) transistor connected to a power rail in a standard cell library; and a decoupling capacitor connected to a ground rail in the standard cell library and the PMOS transistor, wherein the decoupling capacitor comprises an n-type metal-oxide-semiconductor (NMOS) transistor having a source and a drain, either one of the source and the drain of the NMOS transistor being connected to the ground rail via an active resistor. - View Dependent Claims (2, 3, 4, 5)
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6. A tie-low circuit, comprising:
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an n-type metal-oxide-semiconductor (NMOS) transistor connected to a ground rail in a standard cell library; and a decoupling capacitor connected to a power rail in the standard cell library and the NMOS transistor, wherein the decoupling capacitor comprises a p-type metal-oxide-semiconductor (PMOS) transistor having a source and a drain, either one of the source and the drain of the PMOS transistor being connected to the power rail via an active resistor. - View Dependent Claims (7, 8, 9, 10)
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Specification