OPTICAL DETECTOR, FABRICATION METHOD THEREOF, FINGERPRINT RECOGNITION SENSOR, AND DISPLAY DEVICE

• US 20190012508A1
• Filed: 09/05/2017
• Published: 01/10/2019
• Est. Priority Date: 03/13/2017
• Status: Active Grant

• Current Assignee: BOE Technology Group Co., Ltd.
• Original Assignee: BOE Technology Group Co., Ltd.
• Inventors: Sun, Jianming, Ning, Ce, Zhang, Wenlin
• Granted Patent: US 10,496,868 B2
• Time in Patent Office: Days
• CPC Class Codes: G02B 6/132 by deposition of thin films
• CPC Class Codes: G02F 1/1343 Electrodes reflective electrodes G02F1/133553
• CPC Class Codes: G06V 40/1318 using electro-optical elements or layers, e.g. electroluminescent sensing
• CPC Class Codes: H01L 21/44 Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
• CPC Class Codes: H01L 21/82 to produce devices, e.g. integrated circuits, each consisting of a plurality of components
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/146 Imager structures
• CPC Class Codes: H01L 31/112 characterised by field-effect operation, e.g. junction field-effect phototransistor
• CPC Class Codes: H04N 23/55 Optical parts specially adapted for electronic image sensors; Mounting thereof

Abstract

An optical detector includes a stacked structure, an active layer, a gate insulating layer, and a gate electrode. The stacked structure includes a first electrode, a photoelectric conversion layer, a second electrode, a first insulating layer, and a third electrode. The active layer is electrically coupled to one of the first electrode or the second electrode, and electrically coupled to the third electrode. The gate insulating layer is arranged on the active layer. The gate electrode is arranged on the gate insulating layer.

Claims

1. An optical detector, comprising:

a stacked structure including a first electrode, a photoelectric conversion layer, a second electrode, a first insulating layer, and a third electrode;

an active layer electrically coupled to one of the first electrode or the second electrode, and electrically coupled to the third electrode;

a gate insulating layer on the active layer; and

a gate electrode on the gate insulating layer.

2. The optical detector according to claim 1, further comprising:

a second insulating layer arranged between the active layer and the photoelectric conversion layer, and between the active layer and the second electrode,

wherein the active layer is electrically coupled to the first electrode and is electrically insulated from the second electrode.

3. The optical detector according to claim 2, wherein:

the second insulating layer is arranged on a side wall of the photoelectric conversion layer and a sidewall of the second electrode; and

the active layer is formed on an edge region of an upper surface of the first electrode, the second insulating layer, and the third electrode.

4. The optical detector according to claim 1, wherein:

the active layer is electrically coupled to the second electrode and is electrically insulated from the first electrode; and

the active layer is formed on a sidewall of the second electrode, a sidewall of the first insulating layer, and the third electrode.

5. The optical detector according to claim 1, wherein:

each of the active layer, the gate insulating layer, and the gate electrode includes two portions arranged on two opposite sides of the stacked structure.

10. A fingerprint recognition sensor, comprising the optical detector according to claim 1.

11. A display device, comprising the fingerprint recognition sensor according to claim 10.

6. A method for fabricating an optical detector, comprising:

fabricating a stacked structure on a substrate, the stacked structure including a first electrode, a photoelectric conversion layer, a second electrode, a first insulating layer, and a third electrode;

fabricating an active layer electrically coupled to one of the first electrode or the second electrode, electrically coupled to the third electrode, and electrically insulated from the photoelectric conversion layer;

fabricating a gate insulating layer on the active layer; and

fabricating a gate electrode on the gate insulating layer.

7. The method according to claim 6, wherein fabricating the active layer includes:

forming a second insulating layer on a side wall of the photoelectric conversion layer and a sidewall of the second electrode; and

forming the active layer on an edge region of an upper surface of the first electrode, the second insulating layer, and the third electrode, such that the active layer is electrically coupled to the first electrode and electrically insulated from the second electrode.

8. The method according to claim 6, wherein fabricating the stacked structure includes:

forming a composite layer including a third electrode material layer, a first insulating layer material layer, a second electrode material layer, a photoelectric conversion material layer, and a first electrode material layer on the substrate; and

performing a patterning process on the composite layer to form the third electrode, the first insulating layer, the second electrode, the photoelectric conversion layer, and the first electrode.

9. The method according to claim 6, wherein fabricating the active layer includes:

forming the active layer on a sidewall of the second electrode, a sidewall of the first insulating layer, and the third electrode, such that the active layer is electrically coupled to the second electrode and electrically insulated from the first electrode.