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Thermoelectric-based Infrared Detector having a Cavity and a MEMS Structure Defined by BEOL Metals Lines

  • US 20190027522A1
  • Filed: 07/19/2017
  • Published: 01/24/2019
  • Est. Priority Date: 07/19/2017
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a substrate including a transistor region and a hybrid region;

    a transistor component disposed in the transistor region;

    a hybrid component disposed on the substrate in the hybrid region;

    a lower sensor cavity in the hybrid region, the lower sensor cavity is disposed over the hybrid component;

    a micro-electrical mechanical system (MEMS) component disposed over the lower sensor cavity in the hybrid region; and

    a back-end-of-line (BEOL) dielectric disposed on the substrate having a plurality of inter layer dielectric (ILD) layers with metal and via levels, the metal levels include metal lines and the via levels include via contacts for interconnecting the components of the device, wherein the metal lines in the metal levels are configured to define an upper sensor cavity over the lower sensor cavity, and wherein metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.

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