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SGT MOSFET WITH ADJUSTABLE CRSS AND CISS

  • US 20190027596A1
  • Filed: 07/29/2018
  • Published: 01/24/2019
  • Est. Priority Date: 12/02/2015
  • Status: Active Grant
First Claim
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1. A method for manufacturing a power device in a semiconductor substrate comprising:

  • opening a plurality of trenches and filling the trenches with a conductive gate material;

    applying a mask for carrying out a time etch for etching back the conductive gate material from a set of selected trenches thus leaving a bottom portion of the gate conductive material in the selected trenches;

    covering the bottom portion in the selected trenches with a shielding insulation layer to form a bottom shielded electrode followed by filling the selected trench with the conductive gate material to form top electrodes on top of the shielding insulation layer; and

    wherein the step of forming the plurality of trenches further includes a step form a source runner trench and a gate runner trench extending laterally between an active area and a termination area and further including a step of filling the source runner trench with the conductive gate material to electrically connect at least one of the bottom shielded electrodes to a source metal of the power device.

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