CHIP RESISTOR AND METHOD FOR PRODUCING THE SAME
First Claim
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1. A thin-film chip resistor comprising:
- an insulating substrate;
a thin-film resistive element formed on the substrate;
a pair of electrodes connected to the thin-film resistive element; and
a protective film covering at least the thin-film resistive element between the pair of electrodes,wherein;
the protective film includes a first protective film and a second protective film, the first protective film containing silicon nitride in contact with the thin-film resistive element, and the second protective film containing silicon oxide in contact with the first protective film.
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Abstract
Provided is a thin-film chip resistor including an insulating substrate; a thin-film resistive element formed on the substrate; a pair of electrodes connected to the thin-film resistive element; and a protective film covering at least the thin-film resistive element between the pair of electrodes, in which the protective film includes a first protective film and a second protective film, the first protective film containing silicon nitride in contact with the thin-film resistive element, and the second protective film containing silicon oxide in contact with the first protective film.
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8 Claims
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1. A thin-film chip resistor comprising:
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an insulating substrate; a thin-film resistive element formed on the substrate; a pair of electrodes connected to the thin-film resistive element; and a protective film covering at least the thin-film resistive element between the pair of electrodes, wherein; the protective film includes a first protective film and a second protective film, the first protective film containing silicon nitride in contact with the thin-film resistive element, and the second protective film containing silicon oxide in contact with the first protective film. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for producing a thin-film chip resistor, comprising:
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preparing an insulating substrate; forming, on the substrate, a thin-film resistive element and a pair of electrodes connected to the thin-film resistive element, and forming a first protective film containing silicon nitride, the first protective film covering the thin-film resistive element between the pair of electrodes; and forming a second protective film containing silicon oxide, the second protective covering the first protective film. - View Dependent Claims (8)
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Specification