EXHAUST METHOD OF HEAT TREATMENT APPARATUS

• US 20190035645A1
• Filed: 06/13/2018
• Published: 01/31/2019
• Est. Priority Date: 07/27/2017
• Status: Active Grant

• Current Assignee: SCREEN Holdings Co., Ltd.
• Original Assignee: SCREEN Holdings Co., Ltd.
• Inventors: NAKAJIMA, Oma, OMORI, Mao
• Granted Patent: US 10,446,415 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/28185 with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/67248 Temperature monitoring
• CPC Class Codes: H01L 21/67288 Monitoring of warpage, curvature, damage, defects or the like
• CPC Class Codes: H01L 21/6875 characterised by a plurality of individual support members, e.g. support posts or protrusions

Abstract

In a state where an ammonia atmosphere is formed in a chamber for housing a semiconductor wafer, heating treatment is applied to the semiconductor wafer by emitting a flash of light to a front surface of the substrate using a flash lamp. When the semiconductor wafer cracks during flash heating, supplying gas into the chamber as well as exhausting gas therefrom is temporarily stopped. Then, gas in the chamber is exhausted at an exhaust flow rate smaller than a steady exhaust flow rate. The steady exhaust flow rate is an exhaust flow rate when heating treatment is applied to a semiconductor wafer. This enables ammonia in the chamber to be discharged by exhausting gas in the chamber while preventing fragments of the semiconductor wafer from being caught in the vacuum pump.

Claims

1. An exhaust method of a heat treatment apparatus that applies heating treatment to a substrate in a chamber, the exhaust method comprising the steps of:

(a) supplying a predetermined treatment gas into said chamber housing a substrate to apply heating treatment to said substrate while a vacuum pump exhausts gas from said chamber at a first exhaust flow rate;

(b) stopping supply of said treatment gas into said chamber and exhaust from said chamber when cracking of said substrate during the heating treatment in said chamber is detected;

(c) reducing pressure in said chamber after said step (b) by exhausting gas from said chamber at a second exhaust flow rate smaller than said first exhaust flow rate by using said vacuum pump; and

(d) supplying an inert gas into said chamber to restore the pressure in said chamber to atmospheric pressure after the pressure in said chamber is reduced to a predetermined pressure.

2. The exhaust method of the heat treatment apparatus according to claim 1, wherein

an exhaust flow rate from said chamber is increased within a range smaller than said first exhaust flow rate, in said step (c).

3. The exhaust method of the heat treatment apparatus according to claim 2, wherein

a filter is provided in an exhaust line communicatively connecting said vacuum pump and said chamber.

4. The exhaust method of the heat treatment apparatus according to claim 3, wherein

said exhaust line branches into a plurality of bypass lines each having a different diameter, and

the exhaust flow rate from said chamber is adjusted by opening and closing each of the plurality of bypass lines.

5. The exhaust method of the heat treatment apparatus according to claim 1, wherein

a reactive gas is supplied into said chamber in said step (a).

6. The exhaust method of the heat treatment apparatus according to claim 1, wherein

the heating treatment is applied to said substrate by emitting a flash of light to said substrate using a flash lamp in said step (a).