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SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

  • US 20190035792A1
  • Filed: 01/22/2018
  • Published: 01/31/2019
  • Est. Priority Date: 07/31/2017
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate having a gate trench comprised of an upper trench and a lower trench, wherein the upper trench is wider than the lower trench, wherein the upper trench and the lower trench are both located within the semiconductor substrate, and wherein the upper trench has a vertical sidewall;

    a gate embedded in the gate trench, wherein the gate comprises an upper portion and a lower portion;

    a first gate dielectric layer between the upper portion and the vertical sidewall of the upper trench, wherein the first gate dielectric layer has a first thickness; and

    a second gate dielectric layer between the lower portion and a sidewall of the lower trench, wherein the second gate dielectric layer has a second thickness that is smaller than the first thickness.

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