ERROR CORRECTION CIRCUIT AND MEMORY SYSTEM INCLUDING THE SAME
First Claim
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1. An error correction circuit, comprising:
- a syndrome calculation block suitable for generating a syndrome based on a data and an error correction code;
an error location polynomial generation block suitable for generating an error location polynomial for detecting one or more locations of one or more errors based on the syndrome, where a number of operation stages used for generating the error location polynomial is controlled based on a condition information; and
a chien search block suitable for correcting one or more errors of the data based on the error location polynomial.
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Abstract
An error correction circuit includes: a syndrome calculation block suitable for generating a syndrome based on a data and an error correction code; an error location polynomial generation block suitable for generating an error location polynomial for detecting a location of an error based on the syndrome, where the number of operation stages used for generating the error location polynomial is controlled based on condition information; and a chien search block suitable for correcting an error of the data based on the error location polynomial.
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18 Claims
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1. An error correction circuit, comprising:
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a syndrome calculation block suitable for generating a syndrome based on a data and an error correction code; an error location polynomial generation block suitable for generating an error location polynomial for detecting one or more locations of one or more errors based on the syndrome, where a number of operation stages used for generating the error location polynomial is controlled based on a condition information; and a chien search block suitable for correcting one or more errors of the data based on the error location polynomial. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A memory system, comprising:
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one or more memories suitable for storing a data and an error correction code; an error correction code (ECC) generation circuit suitable for generating the error correction code to be programmed in the one or more memories based on the data to be programmed in the one or more memories; a condition information generation circuit suitable for generating condition information that indicates a probability an error occurring in the one or more memories; and an error correction circuit suitable for correcting one or more errors of a data that is read from the one or more memories based on the error correction code that is read from the one or more memories, where an error correction intensity is controlled based on the condition information. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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Specification