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METHODS OF FORMING AN ULTRA-LOW-K DIELECTRIC LAYER AND DIELECTRIC LAYERS FORMED THEREBY

  • US 20190043809A1
  • Filed: 03/01/2018
  • Published: 02/07/2019
  • Est. Priority Date: 08/02/2017
  • Status: Active Grant
First Claim
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1. A method of forming an ultra-low-k dielectric layer, the method comprising:

  • forming a first layer by supplying a precursor including silicon, oxygen, carbon, and hydrogen;

    performing a first ultraviolet process on the first layer to convert the first layer into a second layer; and

    performing a second ultraviolet process on the second layer under a process condition different from that of the first ultraviolet process.

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