×

SEMICONDUCTOR MEMORY DEVICE OF THREE-DIMENSIONAL STRUCTURE

  • US 20190043872A1
  • Filed: 12/28/2017
  • Published: 02/07/2019
  • Est. Priority Date: 08/07/2017
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor memory device comprising:

  • first and second memory blocks disposed adjacent to each other in a first direction, each of the first and second memory blocks including a plurality of conductive layers and a plurality of dielectric layers alternately stacked over a semiconductor layer disposed over a substrate, and a plurality of channel structures passing through the conductive layers and the dielectric layers;

    a dummy block disposed over the semiconductor layer, and provided between the first memory block and the second memory block;

    a plurality of first pass transistors formed over the substrate and below the first memory block, and coupled to the respective conductive layers of the first memory block;

    a plurality of second pass transistors formed over the substrate and below the second memory block, and coupled to the respective conductive layers of the second memory block;

    a plurality of bottom global row lines formed in a bottom wiring layer below the semiconductor layer, and each coupled in common to one of the first pass transistors and one of the second pass transistors; and

    top global row lines formed over the dummy block, and coupled to the respective bottom global row lines through first contact plugs, which pass through the dummy block.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×