SEMICONDUCTOR MEMORY DEVICE OF THREE-DIMENSIONAL STRUCTURE
First Claim
1. A semiconductor memory device comprising:
- first and second memory blocks disposed adjacent to each other in a first direction, each of the first and second memory blocks including a plurality of conductive layers and a plurality of dielectric layers alternately stacked over a semiconductor layer disposed over a substrate, and a plurality of channel structures passing through the conductive layers and the dielectric layers;
a dummy block disposed over the semiconductor layer, and provided between the first memory block and the second memory block;
a plurality of first pass transistors formed over the substrate and below the first memory block, and coupled to the respective conductive layers of the first memory block;
a plurality of second pass transistors formed over the substrate and below the second memory block, and coupled to the respective conductive layers of the second memory block;
a plurality of bottom global row lines formed in a bottom wiring layer below the semiconductor layer, and each coupled in common to one of the first pass transistors and one of the second pass transistors; and
top global row lines formed over the dummy block, and coupled to the respective bottom global row lines through first contact plugs, which pass through the dummy block.
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Accused Products
Abstract
A semiconductor memory device includes first and second memory blocks each including conductive and dielectric layers alternately stacked over a semiconductor layer disposed over a substrate, and disposed adjacent to each other in a first direction; a dummy block disposed over the semiconductor layer, and provided between the first and second memory blocks; first pass transistors formed over the substrate below the first memory block, and coupled to conductive layers, respectively, of the first memory block; second pass transistors formed over the substrate below the second memory block, and coupled to conductive layers, respectively, of the second memory block; bottom global row lines between the first and second pass transistors and the semiconductor layer, and each coupled to one of the first pass transistors and one of the second pass transistors; and top global row lines formed over the dummy block, and coupled to the bottom global row lines.
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Citations
19 Claims
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1. A semiconductor memory device comprising:
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first and second memory blocks disposed adjacent to each other in a first direction, each of the first and second memory blocks including a plurality of conductive layers and a plurality of dielectric layers alternately stacked over a semiconductor layer disposed over a substrate, and a plurality of channel structures passing through the conductive layers and the dielectric layers; a dummy block disposed over the semiconductor layer, and provided between the first memory block and the second memory block; a plurality of first pass transistors formed over the substrate and below the first memory block, and coupled to the respective conductive layers of the first memory block; a plurality of second pass transistors formed over the substrate and below the second memory block, and coupled to the respective conductive layers of the second memory block; a plurality of bottom global row lines formed in a bottom wiring layer below the semiconductor layer, and each coupled in common to one of the first pass transistors and one of the second pass transistors; and top global row lines formed over the dummy block, and coupled to the respective bottom global row lines through first contact plugs, which pass through the dummy block. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 18)
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15. A semiconductor memory device comprising:
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a substrate including a plurality of cell regions arranged along a second direction different from a first direction, and contact regions disposed between the cell regions; first and second memory blocks disposed adjacent to each other in the first direction, each including a plurality of conductive layers and a plurality of dielectric layers alternately stacked over a semiconductor layer formed over the substrate, and a plurality of channel structures passing through the conductive layers and the dielectric layers in the cell regions; a dummy block disposed over the semiconductor layer between the first memory block and the second memory block; first pass transistor units each including a predetermined number of first pass transistors coupled to conductive layers of the first memory block, and formed over even-numbered cell regions of the substrate to overlap with the first memory block; second pass transistor units each including a predetermined number of second pass transistors coupled to conductive layers of the second memory block, and formed over odd-numbered cell regions of the substrate to overlap with the second memory block; bottom global row lines formed in a bottom wiring layer below the semiconductor layer, and each coupled in common to one of the first pass transistors and one of the second pass transistors; and a plurality of top global row lines formed over the dummy block, and coupled to the respective bottom global row lines through first contact plugs, which pass through the dummy block and the semiconductor layer. - View Dependent Claims (16, 17, 19)
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Specification