METHODS AND APPARATUSES FOR ETCH PROFILE OPTIMIZATION BY REFLECTANCE SPECTRA MATCHING AND SURFACE KINETIC MODEL OPTIMIZATION

• US 20190049937A1
• Filed: 08/09/2017
• Published: 02/14/2019
• Est. Priority Date: 08/09/2017
• Status: Abandoned Application

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Tetiker, Mehmet Derya, Sriraman, Saravanapriyan, Bailey, III, Andrew D., Paterson, Alex, Gottscho, Richard A.
• Application Number:
  US15/673,321
• Publication Number:
  US 20190049937A1
• Time in Patent Office: Days
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 1/70 Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
• CPC Class Codes: G03F 7/2037 Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
• CPC Class Codes: G03F 7/26 Processing photosensitive materials; Apparatus therefor G03F7/12 - G03F7/24 take precedence
• CPC Class Codes: G05B 19/41885 characterised by modeling, simulation of the manufacturing system
• CPC Class Codes: G05B 2219/32216 If machining not optimized, simulate new parameters and correct machining
• CPC Class Codes: G05B 2219/45031 Manufacturing semiconductor wafers
• CPC Class Codes: G05B 2219/45212 Etching, engraving, sculpturing, carving
• CPC Class Codes: G06F 2111/06 Multi-objective optimisation, e.g. Pareto optimisation using simulated annealing [SA], ant colony algorithms or genetic algorithms [GA]
• CPC Class Codes: G06F 30/398 Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] optical proximity correction [OPC] design processes G03F1/36
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/32174 Circuits specially adapted for controlling the RF discharge
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32715 Workpiece holder
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32

Abstract

Disclosed are methods of optimizing a computer model which relates the etch profile of a feature on a semiconductor substrate to a set of independent input parameters (A), via the use of a plurality of model parameters (B). In some embodiments, the methods may include modifying one or more values of B so as to reduce a metric indicative of the differences between computed reflectance spectra generated from the model and corresponding experimental reflectance spectra with respect to one or more sets of values of A. In some embodiments, calculating the metric may include an operation of projecting the computed and corresponding experimental reflectance spectra onto a reduced-dimensional subspace and calculating the difference between the reflectance spectra as projected onto the subspace. Also disclosed are etch systems implementing such optimized computer models.

Claims

1-34. -34. (canceled)

35. A method of optimizing a computer model which relates an etch profile of a feature on a semiconductor substrate to a set of independent input parameters, the method comprising:

(a) specifying at least one model parameter to be optimized;

(b) identifying multiple sets of values for a selected set of independent input parameters;

(c) for each set of values specified in (b), receiving an experimental reflectance spectra generated from an optical measurement of an experimental etch process performed using the set of values specified in (b);

(d) for each set of values specified in (b), generating a computed reflectance spectra from the model using the set of values specified in (b);

(e) modifying a value of the model parameter specified in (a) and repeating (d) with the modified value so as to reduce a metric indicative of the differences between the experimental reflectance spectra received in (c) and corresponding computed reflectance spectra generated in (d) with respect to one or more sets of values for the selected independent input parameters specified in (b);

(f) using the computer model with the modified value from (e) to determine a pattern of the lithographic mask; and

(g) applying the pattern to create the lithographic mask.

36. The method of claim 35, further comprising generating at least some of the computed reflectance spectra by a process comprising:

(i) generating a computed etch profile represented by a series of etch profile coordinates using the model;

(ii) from the computed etch profile generated in (i), generating a computed reflectance spectrum by simulating the reflection of electromagnetic radiation off of said computed etch profile.

37. The method of claim 35, wherein:

the experimental reflectance spectra generated in (c) comprise reflectance spectra corresponding to a sequence of etch times representing different durations of etch processes; and

the computed reflectance spectra generated in (d) comprise reflectance spectra computed from the model so as to correspond to the sequence of etch times in (c).

38. The method of claim 37, wherein the experimental reflectance spectra are generated in (c) from optical measurements taken during ongoing etch processes at the sequence of etch times.

39. The method of claim 35, further comprising repeating (e).

40. The method of claim 39, further comprising further repeating (e) until a substantially local or global minimum in error with respect to the model parameters selected in (a) is obtained.

41. The method of claim 35, wherein the computer model calculates local etch rates at a grid of points representing the etch profile of the feature on the semiconductor substrate as a function of time.

42. The method of claim 35, wherein the at least one model parameter comprises a reaction rate constant, a reactant and product sticking coefficient, a reactant diffusion constant and/or a product diffusion constant.

43. The method of claim 35, wherein the identifying in (b) of the multiple sets of values for the set of independent input parameters comprises PCA.

44. The method of claim 43, wherein the PCA is performed with respect to concatenated vectors of independent input parameters and corresponding measured etch profiles.

45. The method of claim 35, wherein applying the pattern to create the lithographic mask comprises transferring the pattern to a resist layer.

46. The method of claim 45, further comprising developing the resist layer and transferring the pattern to an underlying chrome layer.

47. A method of fabricating an etcher apparatus by optimizing a computer model that relates the etch profile of a feature on a semiconductor substrate to a set of independent input parameters, the method comprising:

(a) specifying at least one model parameter to be optimized;

(b) identifying multiple sets of values for a selected set of independent input parameters;

(c) for each set of values specified in (b), receiving an experimental reflectance spectra generated from an optical measurement of an experimental etch process performed using the set of values specified in (b);

(d) for each set of values specified in (b), generating a computed reflectance spectra from the model using the set of values specified in (b);

(e) modifying a value of the model parameter specified in (a) and repeating (d) with the modified value so as to reduce a metric indicative of the differences between the experimental reflectance spectra received in (c) and corresponding computed reflectance spectra generated in (d) with respect to one or more sets of values for the selected independent input parameters specified in (b); and

(f) fabricating an etcher apparatus by using the computer model with the modified value from (e) to identify a reactor design for the etcher apparatus.

48. The method of claim 47, wherein fabricating the etcher apparatus comprises fabricating a component of the etcher apparatus, wherein the component has design identified by using the computer model with the modified value from (e).

49. The method of claim 48, wherein the component is selected from the group consisting of a showerhead, a plasma generator, a pedestal, and a chamber wall.

50. The method of claim 47, further comprising generating at least some of the computed reflectance spectra by a process comprising:

(i) generating a computed etch profile represented by a series of etch profile coordinates using the model;

(ii) from the computed etch profile generated in (i), generating a computed reflectance spectrum by simulating the reflection of electromagnetic radiation off of said computed etch profile.

51. The method of claim 47, wherein:

the experimental reflectance spectra generated in (c) comprise reflectance spectra corresponding to a sequence of etch times representing different durations of etch processes; and

the computed reflectance spectra generated in (d) comprise reflectance spectra computed from the model so as to correspond to the sequence of etch times in (c).

52. The method of claim 47, further comprising repeating (e).

53. The method of claim 47, wherein the computer model calculates local etch rates at a grid of points representing the etch profile of the feature on the semiconductor substrate as a function of time.

54. The method of claim 47, wherein the at least one model parameter comprises a reaction rate constant, a reactant and product sticking coefficient, a reactant diffusion constant and/or a product diffusion constant.

55. A method of etching a semiconductor substrate by optimizing a computer model which relates the etch profile of a feature on a semiconductor substrate to a set of independent input parameters, the method comprising:

(a) specifying at least one model parameter to be optimized;

(b) identifying multiple sets of values for a selected set of independent input parameters;

(c) for each set of values specified in (b), receiving an experimental reflectance spectra generated from an optical measurement of an experimental etch process performed using the set of values specified in (b);

(d) for each set of values specified in (b), generating a computed reflectance spectra from the model using the set of values specified in (b);

(e) modifying a value of the model parameter specified in (a) and repeating (d) with the modified value so as to reduce a metric indicative of the differences between the experimental reflectance spectra received in (c) and corresponding computed reflectance spectra generated in (d) with respect to one or more sets of values for the selected independent input parameters specified in (b);

(f) identifying a set of etch conditions by using the computer model with the modified value from (e); and

(g) etching the semiconductor substrate using the set of etch conditions.

56. The method of claim 55, further comprising generating at least some of the computed reflectance spectra by a process comprising:

(i) generating a computed etch profile represented by a series of etch profile coordinates using the model;

(ii) from the computed etch profile generated in (i), generating a computed reflectance spectrum by simulating the reflection of electromagnetic radiation off of said computed etch profile.

57. The method of claim 55, wherein:

the experimental reflectance spectra generated in (c) comprise reflectance spectra corresponding to a sequence of etch times representing different durations of etch processes; and

the computed reflectance spectra generated in (d) comprise reflectance spectra computed from the model so as to correspond to the sequence of etch times in (c).

58. The method of claim 55, further comprising repeating (e).

59. The method of claim 55, wherein the computer model calculates local etch rates at a grid of points representing the etch profile of the feature on the semiconductor substrate as a function of time.

60. The method of claim 55, wherein the at least one model parameter comprises a reaction rate constant, a reactant and product sticking coefficient, a reactant diffusion constant and/or a product diffusion constant.

61. An optimized computer model provided as computer readable instructions on a non-transitory computer readable medium, wherein the model generates a computed etch profile of a feature on a semiconductor substrate from a set of values for a set of independent input parameters, the computer model having been optimized by operations (a)-(e) of claim 55.

62. A system for processing semiconductor substrates, the system comprising:

an etcher apparatus for etching semiconductor substrates whose operation is adjusted by a set of independent input parameters; and

a controller for controlling the operation of the etcher apparatus, the controller comprising a processor and a memory;

wherein;

the memory stores values of process parameters for operating the etcher apparatus, wherein the values of the process parameters were determined using the optimized computer model of claim 61.

63. The system of claim 62, wherein the process parameters are selected from:

RF plasma frequency and RF plasma power level.

64. The system of claim 62, wherein the etcher apparatus comprises:

a processing chamber;

a substrate holder for holding a substrate within the processing chamber;

a plasma generator for generating a plasma within the processing chamber, the plasma generator comprising an RF power supply;

one or more valve-controlled process gas inlets for flowing one or more process gases into the processing chamber; and

one or more gas outlets fluidically connected to one or more vacuum pumps for evacuating gases from the processing chamber.

65. The system of claim 64, wherein the controller adjusts the frequency and/or the power level of the RF power supply to modify characteristics of the plasma in the processing chamber.

66. The system of claim 64, wherein the controller operates the one or more valve-controlled process gas inlets to adjust the flow rates of one or more process gases into the processing chamber.

67. The system of claim 64, wherein the controller adjusts a temperature and/or a pressure within the processing chamber.