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Metal Oxide Film and Semiconductor Device

  • US 20190051727A1
  • Filed: 10/05/2018
  • Published: 02/14/2019
  • Est. Priority Date: 12/29/2015
  • Status: Active Grant
First Claim
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1. A metal oxide film comprising:

  • indium;

    custom-character which is Al, Ga, Y, or Sn; and

    zinc,wherein a plurality of crystal parts is observed in a transmission electron microscope image in a direction perpendicular to a surface of the metal oxide film, andwherein a proportion of a region other than the plurality of crystal parts is higher than or equal to 20% and lower than or equal to 60%.

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