ELECTROMAGNETIC WAVE DETECTOR

• US 20190051763A1
• Filed: 02/24/2016
• Published: 02/14/2019
• Est. Priority Date: 02/24/2016
• Status: Active Grant

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: SHIMATANI, Masaaki, OGAWA, Shimpei, FUJISAWA, Daisuke, OKUDA, Satoshi
• Granted Patent: US 11,302,834 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 27/1443 with at least one potential jump or surface barrier
• CPC Class Codes: H01L 27/1446 in a repetitive configuration
• CPC Class Codes: H01L 31/02161 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/022408 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/0232 Optical elements or arrangements associated with the device H01L31/0236 takes precedence; for photovoltaic cells H01L31/054; for photovoltaic modules H02S40/20
• CPC Class Codes: H01L 31/02366 of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
• CPC Class Codes: H01L 31/028 including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/0288 characterised by the doping material
• CPC Class Codes: H01L 31/035209 comprising a quantum structures
• CPC Class Codes: H01L 31/101 Devices sensitive to infrared, visible or ultraviolet radiation
• CPC Class Codes: H01L 31/103 the potential barrier being of the PN homojunction type
• CPC Class Codes: H01L 31/112 characterised by field-effect operation, e.g. junction field-effect phototransistor
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

This electromagnetic wave detector that detects electromagnetic waves by performing photoelectric conversion includes: a substrate; an insulating layer that is provided on the substrate; a graphene layer that is provided on the insulating layer; a pair of electrodes, which are provided on the insulating layer, and which are connected to both ends of the graphene layer, respectively; and a contact layer that is provided such that the contact layer is in contact with the graphene layer. The contact layer is formed of a material having a polar group, and a charge is formed in the graphene layer by having the contact layer in contact with the graphene layer.

Claims

1. :

An electromagnetic wave detector configured to detect electromagnetic waves by photoelectric conversion, the electromagnetic wave detector comprising;

a substrate;

an insulating layer provided on the substrate;

a graphene layer provided on the insulating layer as a photoelectric conversion layer;

a pair of electrodes provided on the insulating layer, each of the pair of electrodes being connected to the graphene layer; and

a contact layer provided so as to contact with the graphene layer,

wherein the contact layer is made of a material having a polar group, and electric charge density gradient is formed in the graphene layer in the same plane due to contact between the contact layer and the graphene layer.

2. :

The electromagnetic wave detector according to claim 1, wherein the graphene layer comprises a contact region in which electric charge is formed due to contact between the contact layer and the graphene layer and a non-contact region in which no electric charge is formed.

3. :

The electromagnetic wave detector according to claim 1, wherein the contact layer covers a boundary between the graphene layer and the electrode.

4. :

The electromagnetic wave detector according to claim 1, wherein the contact layer is made of a material that chemically performs polarity conversion or a material that performs polarity conversion by electromagnetic wave irradiation.

5. :

The electromagnetic wave detector according to claim 1, wherein the contact layer is a material to be selected from a group consisting of;

a polymer material having polarity, a material having a hydroxyl group or a carboxyl group, a material in which oxidation-reduction reaction occurs by electromagnetic wave irradiation, a composition material comprising a photosensitizer having a quinone diazide group and a novolak resin, and an inorganic material having polarity.

6. :

The electromagnetic wave detector according to claim 1, wherein a plurality of the contact layers are provided on the graphene layer.

7. :

The electromagnetic wave detector according to claim 1, wherein the contact layer contacts with a part of the graphene layer of p-type to change the graphene layer to an n-type region causes the graphene layer to have an npn structure or a pnp structure.

8. :

The electromagnetic wave detector according to claim 1, wherein the contact layer includes a plurality of contact layers made of materials different from each other.

9. :

The electromagnetic wave detector according to claim 8, wherein two of the contact layers made of materials different from each other face each other across the graphene layer.

10. :

The electromagnetic wave detector according to claim 1, wherein the contact layer is provided on the graphene layer, and another graphene layer is further provided so as to cover the contact layer and the graphene layer.

11. :

The electromagnetic wave detector according to claim 1, wherein the contact layer is provided between the insulating layer and the graphene layer.

12. :

The electromagnetic wave detector according to claim 1, wherein the electrode has a periodic structure including periodic recesses or protrusions, and an electromagnetic wave having a specific wavelength plasmon-resonates according to the periodic structure.

13. :

The electromagnetic wave detector according to claim 1, wherein the graphene film has a periodic structure including periodic recesses or protrusions, and an electromagnetic wave having a specific wavelength plasmon-resonates according to the periodic structure.

15. :

An array sensor comprising the electromagnetic wave detector according to claim 1 arranged in an array.

14. :

An electromagnetic wave detector configured to detect electromagnetic waves by photoelectric conversion, the electromagnetic wave detector comprising;

a substrate;

an insulating layer provided on the substrate;

a two-dimensional material layer provided on the insulating layer, the two-dimensional material layer made of a transition metal dichalcogenide or black phosphorus;

a pair of electrodes provided on the insulating layer, each of the pair of electrodes being connected to the two-dimensional material layer; and

a contact layer provided so as to contact with the two-dimensional material layer,

wherein the contact layer is made of a material having a polar group, and electric charge is formed in the two-dimensional material layer due to contact between the contact layer and the two-dimensional material layer.