SLC CACHE MANAGEMENT

• US 20190065080A1
• Filed: 08/30/2017
• Published: 02/28/2019
• Est. Priority Date: 08/30/2017
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Tanpairoj, Kulachet, Jean, Sebastien Andre, Muchherla, Kishore Kumar, Malshe, Ashutosh, Huang, Jianmin
• Granted Patent: US 10,545,685 B2
• Time in Patent Office: Days
• CPC Class Codes: G06F 12/0246 in block erasable memory, e.g. flash memory
• CPC Class Codes: G06F 12/0811 with multilevel cache hierarchies
• CPC Class Codes: G06F 2212/283 Plural cache memories
• CPC Class Codes: G06F 2212/7202 Allocation control and policies
• CPC Class Codes: G06F 2212/7203 Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks
• CPC Class Codes: G06F 3/061 Improving I/O performance
• CPC Class Codes: G06F 3/0619 in relation to data integrity, e.g. data losses, bit errors
• CPC Class Codes: G06F 3/0655 Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
• CPC Class Codes: G06F 3/0688 Non-volatile semiconductor memory arrays
• CPC Class Codes: Y02D 10/00 Energy efficient computing, e.g. low power processors, power management or thermal management

Abstract

Disclosed in some examples are memory devices which feature customizable Single Level Cell (SLC) and Multiple Level Cell (MLC) configurations. The SLC memory cells serve as a high-speed cache providing SLC level performance with the storage capacity of a memory device with MLC memory cells. The proportion of cells configured as MLC vs the proportion that are configured as SLC storage may be configurable, and in some examples, the proportion may change during usage based upon configurable rules based upon memory device metrics. In some examples, when the device activity is below an activity threshold, the memory device may skip the SLC cache and place the data directly into the MLC storage to reduce power consumption.

Claims

1. A memory device, the memory device comprising:

an array of memory cells, the memory cells in the array configurable as either a multi-level cell (MLC) configuration or a single level cell (SLC) configuration;

a controller, the controller executing firmware instructions, which cause the controller to perform operations comprising;

receiving over a communications interface, a behavior profile for an SLC cache of the memory device, the behavior profile describing an SLC cache allocation;

configuring memory cells of the array as belonging either to an SLC cache pool or an MLC storage pool based upon the behavior profile;

receiving a write command to write data to the memory device;

writing the data to the SLC cache pool; and

subsequent to writing the data to the SLC cache pool, transferring the data to the MLC storage pool.

2. The memory device of claim 1, wherein the communications interface is a Universal Flash Storage interface.

3. The memory device of claim 1, wherein the behavior profile comprises a target logical block addressing (LBA) saturation threshold and a corresponding target size of the SLC cache, and wherein the operations further comprise:

determining that a current LBA saturation exceeds the target LBA saturation threshold, and in response, adjusting the configuration of the memory cells in the array such that a number of the memory cells in the SLC cache produces an SLC cache size that is the target size.

4. The memory device of claim 1, wherein the behavior profile includes a write activity threshold and wherein the operations further comprise:

receiving a second write command to write second data to the memory device;

determining that write activity of the memory device is below the write activity threshold, and in response, writing the second data to the MLC storage pool, bypassing the SLC cache.

5. The memory device of claim 4, wherein the write activity threshold is a number of pending write requests.

6. The memory device of claim 1, wherein the write command is received from a host over an interface implemented according to a Universal Flash Storage (UFS) standard.

7. The memory device of claim 1, wherein the operations of determining the behavior profile of the SLC cache of the memory device and configuring memory cells of the array as belonging either to the SLC cache pool or the MLC storage pool based upon the behavior profile are performed only upon a first execution of the firmware object.

8. The memory device of claim 1, wherein the behavior profile comprises a target activity threshold and a corresponding target size of the SLC cache, and wherein the operations further comprise:

determining that a current activity threshold exceeds the target activity threshold, and in response, adjusting the configuration of the memory cells in the array such that a number of the memory cells in the SLC cache produces an SLC cache size that is the target size.

9. A method comprising:

at a memory device comprising an array of memory cells, the memory cells in the array configurable as either a multi-level cell (MLC) configuration or a single level cell (SLC) configuration, using a controller, performing operations comprising;

receiving over a communications interface, a behavior profile for an SLC cache of the memory device, the behavior profile describing an SLC cache allocation;

configuring memory cells of the array as belonging either to an SLC cache pool or an MLC storage pool based upon the behavior profile;

receiving a write command to write data to the memory device;

writing the data to the SLC cache pool; and

subsequent to writing the data to the SLC cache pool, transferring the data to the MLC storage pool.

10. The method of claim 9, wherein the communications interface is a Universal Flash Storage interface.

11. The method of claim 9, wherein the behavior profile comprises a target logical block addressing (LBA) saturation threshold and a corresponding target size of the SLC cache, and wherein the operations further comprise:

determining that a current LBA saturation exceeds the target LBA saturation threshold, and in response, adjusting the configuration of the memory cells in the array such that a number of the memory cells in the SLC cache produces an SLC cache size that is the target size.

12. The method of claim 9, wherein the behavior profile includes a write activity threshold and wherein the operations further comprise:

receiving a second write command to write second data to the memory device;

determining that write activity of the memory device is below the write activity threshold, and in response, writing the second data to the MLC storage pool, by passing the SLC cache.

13. The method of claim 12, wherein the write activity threshold is a number of pending write requests.

14. The method of claim 9, wherein the write command is received from a host over an interface implemented according to a Universal Flash Storage (UFS) standard.

15. The method of claim 9, wherein the operations of determining the behavior profile of the SLC cache of the memory device and configuring memory cells of the array as belonging either to the SLC cache pool or the MLC storage pool based upon the behavior profile are performed only upon a first execution of the firmware object.

16. The method of claim 9, wherein the behavior profile comprises a target activity threshold and a corresponding target size of the SLC cache, and wherein the operations further comprise:

determining that a current activity threshold exceeds the target activity threshold, and in response, adjusting the configuration of the memory cells in the array such that a number of the memory cells in the SLC cache produces an SLC cache size that is the target size.

17. A machine-readable medium comprising instructions, that when executed by a machine, cause the machine to perform operations comprising:

receiving over a communications interface, a behavior profile for an SLC cache of a memory device, the behavior profile describing an SLC cache allocation;

configuring memory cells of an array of memory cells as belonging either to an SLC cache pool or an MLC storage pool based upon the behavior profile;

receiving a write command to write data to the memory device;

writing the data to the SLC cache pool; and

subsequent to writing the data to the SLC cache pool, transferring the data to the MLC storage pool.

18. The machine-readable medium of claim 17, wherein the communications interface is a Universal Flash Storage interface.

19. The machine-readable medium of claim 17, wherein the behavior profile comprises a target logical block addressing (LBA) saturation threshold and a corresponding target size of the SLC cache, and wherein the operations further comprise:

determining that a current LBA saturation exceeds the target LBA saturation threshold, and in response, adjusting the configuration of the memory cells in the array such that a number of the memory cells in the SLC cache produces an SLC cache size that is the target size.

20. The machine-readable medium of claim 17, wherein the behavior profile includes a write activity threshold and wherein the operations further comprise:

receiving a second write command to write second data to the memory device;

determining that write activity of the memory device is below the write activity threshold, and in response, writing the second data to the MLC storage pool, bypassing the SLC cache.

21. The machine-readable medium of claim 20, wherein the write activity threshold is a number of pending write requests.