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INTER-POLY OXIDE IN FIELD EFFECT TRANSISTORS

  • US 20190067427A1
  • Filed: 12/08/2017
  • Published: 02/28/2019
  • Est. Priority Date: 08/24/2017
  • Status: Abandoned Application
First Claim
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1. A method of manufacturing a shielded gate field effect transistor comprising:

  • forming a trench within a substrate;

    forming a shield oxide material within the trench;

    depositing a shield electrode material on the shield oxide material;

    recessing the shield electrode material within the trench;

    recessing the shield oxide material within the trench to widen an upper portion of the trench;

    recessing the shield electrode material thus forming a recession; and

    depositing an inter-poly oxide material on the shield electrode material into the recession, thus filling the recession.

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