SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

• US 20190067442A1
• Filed: 11/01/2017
• Published: 02/28/2019
• Est. Priority Date: 08/29/2017
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: LIN, Chun-Hsiung, CHANG, Chia-Hao, WANG, Chih-Hao, LIEN, Wai-Yi, CHOU, Chih-Chao, WANG, Pei-Yu
• Granted Patent: US 10,510,860 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/28123 Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
• CPC Class Codes: H01L 21/764 Air gaps H01L21/76264 takes precedence
• CPC Class Codes: H01L 21/823821 with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 27/0924 including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/4991 comprising an air gap
• CPC Class Codes: H01L 29/66545 using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/7851 with the body tied to the substrate

Abstract

In a method for manufacturing a semiconductor device, a gate structure is formed over a channel layer and an isolation insulating layer. A first sidewall spacer layer is formed on a side surface of the gate structure. A sacrificial layer is formed so that an upper portion of the gate structure with the first sidewall spacer layer is exposed from the sacrificial layer and a bottom portion of the gate structure with the first sidewall spacer layer is embedded in the first sacrificial layer. A space is formed between the bottom portion of the gate structure and the sacrificial layer by removing at least part of the first sidewall spacer layer. After the first sidewall spacer layer is removed, an air gap is formed between the bottom portion of the gate structure and the sacrificial layer by forming a second sidewall spacer layer over the gate structure.

Claims

1. A method for manufacturing a semiconductor device, the method comprising:

forming a gate structure over a channel layer and an isolation insulating layer;

forming a first sidewall spacer layer on a side surface of the gate structure;

forming a sacrificial layer so that an upper portion of the gate structure with the first sidewall spacer layer is exposed from the sacrificial layer and a bottom portion of the gate structure with the first sidewall spacer layer is embedded in the first sacrificial layer;

forming a space between the bottom portion of the gate structure and the sacrificial layer by removing at least part of the first sidewall spacer layer; and

after the first sidewall spacer layer is removed, forming an air gap between the bottom portion of the gate structure and the sacrificial layer by forming a second sidewall spacer layer over the gate structure.

2. The method of claim 1, wherein no air gap is formed on a side surface of the upper portion of the gate structure.

3. The method of claim 1, further comprising forming a liner layer over the first sidewall spacer layer, before the sacrificial layer is formed,

wherein the space is formed between the liner layer and the bottom portion of the gate structure.

4. The method of claim 1, further comprising, after the air gap is formed:

removing the sacrificial layer; and

forming an interlayer dielectric layer.

5. The method of claim 1, wherein the sacrificial layer includes amorphous silicon.

6. The method of claim 1, further comprising, before the second sidewall spacer layer is formed, forming a sidewall liner layer at least in the space so as not to completely fill the space.

7. The method of claim 1, wherein the first sidewall spacer layer includes SiOCN.

8. A method for manufacturing a semiconductor device, the method comprising:

forming a gate structure over a channel layer of a fin structure and an isolation insulating layer;

forming a first sidewall spacer layer on a side surface of the gate structure, the first sidewall spacer layer including a main layer;

forming a liner layer over the first sidewall spacer layer,

forming a sacrificial layer so that an upper portion of the gate structure with the first sidewall spacer layer and the liner layer is exposed from the sacrificial layer and a bottom portion of the gate structure with the first sidewall spacer layer and the liner layer is embedded in the first sacrificial layer;

forming a space between the bottom portion of the gate structure and the liner layer by removing the main layer of the first sidewall spacer layer; and

after the first sidewall spacer layer is removed, forming an air gap between the bottom portion of the gate structure and the liner layer by forming a second sidewall spacer layer.

9. The method of claim 8, wherein the sacrificial layer is formed so that the fin structure is also embedded in the sacrificial layer.

10. The method of claim 8, wherein:

the first sidewall spacer layer further includes one or more sub-layers, each of which is made of different material than the main layer,

one of the one or more sub-layers is formed on the side surface of the gate structure, and

the space is formed between the one of the one or more sub-layers disposed on the bottom portion of the gate structure and the liner layer.

11. The method of claim 10, wherein the main layer is thicker than each of the one or more sub-layers.

12. The method of claim 10, wherein the main layer is made of one selected from the group consisting of silicon oxide, silicon nitride, SiOCN and an insulating metal oxide.

13. The method of claim 10, wherein the one or more sub-layers are made of SiOCN.

14. The method of claim 8, wherein:

the first sidewall spacer layer further includes a first sub-layer disposed on the gate structure and a second sub-layer, each which is made of different material than the main layer,

the main layer is disposed between the first and second sub-layers, and

the space is formed between the first sub-layer disposed on the bottom portion of the gate structure and the liner layer.

15. The method of claim 14, further comprising, before the second sidewall spacer layer is formed, forming a sidewall liner layer at least in the space so as not to completely fill the space.

16. The method of claim 8, wherein the first sidewall spacer layer consists of the main layer.

17. The method of claim 8, wherein when forming the space, an upper portion of the liner layer exposed from the sacrificial layer is also removed.

18. The method of claim 8, wherein:

the gate structure is a dummy gate structure, and

the method further comprising, after the air gap is formed;

forming an interlayer dielectric layer;

removing the dummy gate structure, thereby forming a gate space; and

forming a metal gate structure in the gate space.

19. The method of claim 18, wherein before forming the interlayer dielectric layer, the sacrificial layer is removed.

20. (canceled)

21. A method for manufacturing a semiconductor device, the method comprising:

forming a gate structure over a channel layer of a fin structure and an isolation insulating layer;

forming a source epitaxial layer and a drain epitaxial layer over the fin structure not covered by the gate structure;

forming a first sidewall spacer layer on a side surface of the gate structure;

forming a sacrificial layer so that an upper portion of the gate structure with the first sidewall spacer layer is exposed from the sacrificial layer and a bottom portion of the gate structure with the first sidewall spacer layer and the source and drain epitaxial layers are embedded in the first sacrificial layer;

forming a space between the bottom portion of the gate structure and the sacrificial layer by removing at least part of the first sidewall spacer layer, such that a part of an upper surface of the isolation insulating layer is exposed to the space; and

after the first sidewall spacer layer is removed, forming an air gap between the bottom portion of the gate structure and the sacrificial layer by forming a second sidewall spacer layer over the gate structure.