REDUCING MOSFET BODY CURRENT
First Claim
1. A bidirectional MOSFET switch having reduced body current, the switch comprising:
- a body region that is a semiconductor of a first type separating a source region and a drain region that are a semiconductor of a second type, the body region being connected to a body terminal, the source region being connected to a source terminal, and the drain region being connected to a drain terminal;
a buried layer that is a semiconductor of the second type separating the body region from a substrate that is a semiconductor of the first type, the buried layer being coupled to a buried layer terminal;
a gate terminal drivable to form a channel in the body region, thereby enabling conduction between the source terminal and the drain terminal; and
a configuration switch that connects the body terminal to the buried layer terminal when the source terminal voltage exceeds the drain terminal voltage.
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Accused Products
Abstract
An illustrative bidirectional MOSFET switch includes a body region, a buried layer, a gate terminal, and a configuration switch. The body region is a semiconductor of a first type separating a source region and a drain region that are a semiconductor of a second type. The buried layer is a semiconductor of the second type separating the body region from a substrate that is a semiconductor of the first type. The gate terminal is drivable to form a channel in the body region, thereby enabling conduction between the source terminal and the drain terminal. The configuration switch connects the body terminal to the buried layer terminal when the source terminal voltage exceeds the drain terminal voltage.
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Citations
20 Claims
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1. A bidirectional MOSFET switch having reduced body current, the switch comprising:
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a body region that is a semiconductor of a first type separating a source region and a drain region that are a semiconductor of a second type, the body region being connected to a body terminal, the source region being connected to a source terminal, and the drain region being connected to a drain terminal; a buried layer that is a semiconductor of the second type separating the body region from a substrate that is a semiconductor of the first type, the buried layer being coupled to a buried layer terminal; a gate terminal drivable to form a channel in the body region, thereby enabling conduction between the source terminal and the drain terminal; and a configuration switch that connects the body terminal to the buried layer terminal when the source terminal voltage exceeds the drain terminal voltage. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of manufacturing a bidirectional MOSFET switch having reduced body current, the method comprising:
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creating an n-type buried layer underlying a p-type body region; forming in the body region an n-type source region and an n-type drain region; connecting a buried layer terminal to the buried layer, a body terminal to the body region, a source terminal to the source region, and a drain terminal to the drain region; providing a gate terminal that is drivable to form a channel in the body region, thereby enabling conduction between the source terminal and the drain terminal; and coupling a configuration switch between the body terminal and buried layer terminal to connect the body terminal to the buried layer terminal when the source terminal voltage exceeds the drain terminal voltage. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification