SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate having a first surface and a second surface which is a surface opposite to the first surface;
a first insulation isolation film which is arranged in the first surface and in which a first trench which extends in a direction toward the second surface is formed; and
a conductive film having a gate electrode, a first buried part which is buried in the first trench and a first cap part which is located over the first buried part,wherein the semiconductor substrate has a source region of a first conductivity type which is arranged in the first surface, a drain region of the first conductivity type which is arranged in the first surface separately from the source region, a drift region of the first conductivity type which is arranged in the first surface so as to surround the drain region and a body region of a second conductivity type which is a conductivity type opposite to the first conductivity type which is arranged in the first surface so as to be sandwiched between the drift region and the source region and to surround the source region,wherein the gate electrode faces the body region which is sandwiched between the drift region and the source region while being insulated from the body region, andwherein the first cap part projects from the first buried part in a channel width direction which is a direction along a boundary between the body region and the drift region in a planar view over the first insulation isolation film.
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Accused Products
Abstract
A semiconductor device includes a semiconductor substrate having a first surface and a second surface, a first insulation isolation film in which a first trench is formed and a conductive film having a gate electrode, a first buried part buried in the first trench and a first cap part located on the first buried part. The semiconductor substrate has a source region, a drain region, a drift region and a body region. The gate electrode faces the body region which is sandwiched between the drift region and the source region while being insulated from the body region. The first cap part projects longer than the first buried part in a channel width direction which is a direction along a boundary between the body region and the drift region in a planar view on the first insulation isolation film.
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Citations
10 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate having a first surface and a second surface which is a surface opposite to the first surface; a first insulation isolation film which is arranged in the first surface and in which a first trench which extends in a direction toward the second surface is formed; and a conductive film having a gate electrode, a first buried part which is buried in the first trench and a first cap part which is located over the first buried part, wherein the semiconductor substrate has a source region of a first conductivity type which is arranged in the first surface, a drain region of the first conductivity type which is arranged in the first surface separately from the source region, a drift region of the first conductivity type which is arranged in the first surface so as to surround the drain region and a body region of a second conductivity type which is a conductivity type opposite to the first conductivity type which is arranged in the first surface so as to be sandwiched between the drift region and the source region and to surround the source region, wherein the gate electrode faces the body region which is sandwiched between the drift region and the source region while being insulated from the body region, and wherein the first cap part projects from the first buried part in a channel width direction which is a direction along a boundary between the body region and the drift region in a planar view over the first insulation isolation film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A manufacturing method for semiconductor device comprising the steps of:
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(a) forming, in a semiconductor substrate having a first surface and a second surface which is a surface opposite to the first surface, a source region of a first conductivity type which is arranged in the first surface, a drain region of the first conductivity type which is arranged in the first surface separately from the source region, a drift region of the first conductivity type which is arranged in the first surface so as to surround the drain region and a body region of a second conductivity type opposite to the first conductivity type which is arranged in the first surface so as to be sandwiched between the drift region and the source region and to surround the source region; (b) forming a first insulation isolation film in which a first trench which extends in a direction toward the second surface is formed in the first surface; and (c) forming a conducive film having a gate electrode which faces the body region which is sandwiched between the drift region and the source region while being insulated from the body region, a first buried part which is buried in the first trench and a first cap part which is located over the first buried part, wherein the first cap part projects longer than the first buried part in a channel width direction which is a direction along a boundary between the body region and the drift region in a planar view over the first insulation isolation film, and wherein in the step (b) of forming the conductive film, the first cap part is formed after burying the first buried part into the first trench.
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Specification