SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. A Fin Field-Effect Transistor (Fin FET) device, comprising:
- a fin structure including a well layer, an oxide layer, and a channel layer sequentially stacked on each other;
a gate stack including a gate electrode layer and a gate dielectric layer, covering a portion of the fin structure;
first and second seed layers formed on side surfaces of the oxide layer;
a source disposed on a first side of the channel layer, and protruding from the well layer and the first and second seed layers; and
a drain disposed on a second side of the channel layer opposing the first side, and protruding from the well layer and the first and second seed layers.
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Accused Products
Abstract
A method for manufacturing a semiconductor device includes forming a fin structure including a well layer, an oxide layer disposed over the well layer and a channel layer disposed over the oxide layer. An isolation insulating layer is formed so that the channel layer of the fin structure protrudes from the isolation insulating layer and a part of or an entirety of the oxide layer is embedded in the isolation insulating layer. A gate structure is formed over the fin structure. A recessed portion is formed by etching a part of the fin structure not covered by the gate structure such that the oxide layer is exposed. A recess is formed in the exposed oxide layer. An epitaxial seed layer in the recess in the oxide layer. An epitaxial layer is formed in and above the recessed portion. The epitaxial layer is in contact with the epitaxial seed layer.
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Citations
20 Claims
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1. A Fin Field-Effect Transistor (Fin FET) device, comprising:
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a fin structure including a well layer, an oxide layer, and a channel layer sequentially stacked on each other; a gate stack including a gate electrode layer and a gate dielectric layer, covering a portion of the fin structure; first and second seed layers formed on side surfaces of the oxide layer; a source disposed on a first side of the channel layer, and protruding from the well layer and the first and second seed layers; and a drain disposed on a second side of the channel layer opposing the first side, and protruding from the well layer and the first and second seed layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A Fin Field-Effect Transistor (Fin FET) device, comprising:
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an isolation insulating layer; a fin structure including a well layer, an oxide layer, and a channel layer sequentially stacked on each other; first and second seed layers disposed at least on side surfaces of the well layer to separate the side surfaces of the well from the isolation insulating layer; a gate stack including a gate electrode layer and a gate dielectric layer, covering a portion of the fin structure; a source disposed on a first side of the channel layer, and protruding from the well layer and the first and second seed layers; and a drain disposed on a second side of the channel layer opposing the first side, and protruding from the well layer and the first and second seed layers. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A Fin Field-Effect Transistor (Fin FET) device, comprising:
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a fin structure including a well layer, an oxide layer, and a channel layer sequentially stacked on each other; first and second seed layers disposed on side surfaces of the well layer and side surfaces of the oxide layer; a first dielectric layer disposed between the first seed layer and the well and a second dielectric layer disposed between the second seed layer and the well; a gate stack including a gate electrode layer and a gate dielectric layer, covering a portion of the fin structure; a source disposed on a first side of the channel layer, and protruding from the well layer and the first and second seed layers; and a drain disposed on a second side of the channel layer opposing the first side, and protruding from the well layer and the first and second seed layers. - View Dependent Claims (17, 18, 19, 20)
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Specification