VERTICAL CAVITY SURFACE EMITTING LASER, METHOD FOR FABRICATING VERTICAL CAVITY SURFACE EMITTING LASER
First Claim
1. A vertical cavity surface emitting laser comprising:
- a supporting base; and
a post including an upper distributed Bragg reflecting region, an active layer, and a lower distributed Bragg reflecting region, and the upper distributed Bragg reflecting region, the active layer, and the lower distributed Bragg reflecting region being arranged on the supporting base,the lower distributed Bragg reflecting region including first semiconductor layers and second semiconductor layers alternately arranged,the first semiconductor layers each having a refractive index lower than that of each of the second semiconductor layers,the upper distributed Bragg reflecting region including first layers and second layers alternately arranged,the first layers each having a group III-V compound semiconductor portion and a group III oxide portion,the group III-V compound semiconductor portion containing aluminum as a group III constituent element, andthe group III oxide portion surrounding the group III-V compound semiconductor portion.
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Accused Products
Abstract
A vertical cavity surface emitting laser includes: a supporting base: and a post including an upper distributed Bragg reflecting region, an active layer, and a lower distributed Bragg reflecting region. The upper distributed Bragg reflecting region, the active layer, and the lower distributed Bragg reflecting region are arranged on the supporting base. The lower distributed Bragg reflecting region includes first semiconductor layers and second semiconductor layers alternately arranged. The first semiconductor layers each have a refractive index lower than that of each of the second semiconductor layers. The upper distributed Bragg reflecting region includes first layers and second layers alternately arranged. The first layers each have a group III-V compound semiconductor portion and a group III oxide portion. The group III-V compound semiconductor portion contains aluminum as a group III constituent element, and the group III oxide portion surrounds the group III-V compound semiconductor portion.
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Citations
5 Claims
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1. A vertical cavity surface emitting laser comprising:
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a supporting base; and a post including an upper distributed Bragg reflecting region, an active layer, and a lower distributed Bragg reflecting region, and the upper distributed Bragg reflecting region, the active layer, and the lower distributed Bragg reflecting region being arranged on the supporting base, the lower distributed Bragg reflecting region including first semiconductor layers and second semiconductor layers alternately arranged, the first semiconductor layers each having a refractive index lower than that of each of the second semiconductor layers, the upper distributed Bragg reflecting region including first layers and second layers alternately arranged, the first layers each having a group III-V compound semiconductor portion and a group III oxide portion, the group III-V compound semiconductor portion containing aluminum as a group III constituent element, and the group III oxide portion surrounding the group III-V compound semiconductor portion. - View Dependent Claims (2, 3, 4)
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5. A method for fabricating a vertical cavity surface emitting laser comprising:
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preparing an epitaxial substrate, the epitaxial substrate including a lower semiconductor laminate for a lower distributed Bragg reflecting region, a semiconductor laminate for an active layer, and an upper semiconductor laminate for an upper distributed Bragg reflecting region; forming a mask on the epitaxial substrate, the mask having a pattern defining a post for the vertical cavity surface emitting laser; etching the upper semiconductor laminate and the semiconductor laminate of the epitaxial substrate with the mask to form a substrate product, and the substrate product having an upper part of the post; exposing the upper part of the substrate product to an oxidizing atmosphere; and after exposing the upper part of the substrate product to the oxidizing atmosphere, etching the lower semiconductor laminate to form a lower part of the post, the upper semiconductor laminate having a semiconductor layer of III-V compound semiconductor containing aluminum as a group III constituent element, the semiconductor layer reaching a side of the post, exposing the upper part of the substrate product to an oxidizing atmosphere including producing a current confining structure from the semiconductor layer, and the current confining structure having an insulating portion and a current aperture portion of the III-V compound semiconductor.
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Specification