SEMICONDUCTOR DEVICE
First Claim
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1. A semiconductor device comprising:
- a core layer;
a first clad layer having a refractive index lower than that of the core layer; and
a second clad layer having a refractive index lower than that of the core layer and different from that of the first clad layer,the core layer comprising;
a first portion contacting with the first clad layer and overlapping with the first clad layer in plan view;
a second portion having a first overlapping portion contacting with the first clad layer and overlapping with the first clad layer in plan view and a second overlapping portion contacting with the second clad layer and overlapping with the second clad layer in plan view and adjacent to the first portion; and
a third portion contacting with the second clad layer, overlapping with the second clad layer in plan view, adjacent to the second portion, and having a finite radius of curvature,wherein at a position in which each of the first clad layer and the second clad layer contacts with the core layer in a cross-section orthogonal to an extending direction of the second portion and passing through the second portion, a first ratio of the first clad layer to the second clad layer and a second ratio of the second clad layer to the first clad layer are each a finite value more than 0,wherein the first ratio, at the position in which each of the first clad layer and the second clad layer contacts with the core layer in a cross-section orthogonal to an extending direction of the second portion and passing through the second portion, is lower than the first ratio at a position in which each of the first clad layer and the second clad layer contacts with the core layer in a cross-section orthogonal to an extending direction of the first portion and passing through the first portion, and is greater than the first ratio at a position in which each of the first clad layer and the second clad layer contacts with the core layer in a cross-section orthogonal to an extending direction of the third portion and passing through the third portion, andwherein the second ratio, at the position in which each of the first clad layer and the second clad layer contacts with the core layer in a cross-section orthogonal to an extending direction of the second portion and passing through the second portion, is greater than the second ratio at the position in which each of the first clad layer and the second clad layer contacts with the core layer in a cross-section orthogonal to an extending direction of the first portion and passing through the first portion, and is lower than the second ratio at the position in which each of the first clad layer and the second clad layer contacts with the core layer in a cross-section orthogonal to an extending direction of the third portion and passing through the third portion.
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Abstract
To provide a semiconductor device including a low-loss optical waveguide. The optical waveguide included in the semiconductor device has a core layer covered with first and second clad layers having respectively different refractive indices. A portion of the core layer is covered at a first ratio, that is, a ratio of the first clad layer to the second clad layer and at the same time, a second ratio, that is, a ratio of the second clad layer to the first clad layer. At this time, the first ratio and the second ratio are each a finite value more than 0.
3 Citations
20 Claims
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1. A semiconductor device comprising:
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a core layer; a first clad layer having a refractive index lower than that of the core layer; and a second clad layer having a refractive index lower than that of the core layer and different from that of the first clad layer, the core layer comprising; a first portion contacting with the first clad layer and overlapping with the first clad layer in plan view; a second portion having a first overlapping portion contacting with the first clad layer and overlapping with the first clad layer in plan view and a second overlapping portion contacting with the second clad layer and overlapping with the second clad layer in plan view and adjacent to the first portion; and a third portion contacting with the second clad layer, overlapping with the second clad layer in plan view, adjacent to the second portion, and having a finite radius of curvature, wherein at a position in which each of the first clad layer and the second clad layer contacts with the core layer in a cross-section orthogonal to an extending direction of the second portion and passing through the second portion, a first ratio of the first clad layer to the second clad layer and a second ratio of the second clad layer to the first clad layer are each a finite value more than 0, wherein the first ratio, at the position in which each of the first clad layer and the second clad layer contacts with the core layer in a cross-section orthogonal to an extending direction of the second portion and passing through the second portion, is lower than the first ratio at a position in which each of the first clad layer and the second clad layer contacts with the core layer in a cross-section orthogonal to an extending direction of the first portion and passing through the first portion, and is greater than the first ratio at a position in which each of the first clad layer and the second clad layer contacts with the core layer in a cross-section orthogonal to an extending direction of the third portion and passing through the third portion, and wherein the second ratio, at the position in which each of the first clad layer and the second clad layer contacts with the core layer in a cross-section orthogonal to an extending direction of the second portion and passing through the second portion, is greater than the second ratio at the position in which each of the first clad layer and the second clad layer contacts with the core layer in a cross-section orthogonal to an extending direction of the first portion and passing through the first portion, and is lower than the second ratio at the position in which each of the first clad layer and the second clad layer contacts with the core layer in a cross-section orthogonal to an extending direction of the third portion and passing through the third portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A semiconductor device, comprising:
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a core layer; a first clad layer having a refractive index lower than that of the core layer; and a second clad layer having a refractive index lower than that of the core layer and different from that of the first clad layer, wherein the core layer comprises; a first portion contiguous to the first clad layer and overlapping with the first clad layer in plan view; a second portion contiguous to the first clad layer, overlapping with the first clad layer in plan view, and adjacent to the first portion; and a third portion contiguous to the second clad layer, overlapping with the second clad layer in plan view, adjacent to the second portion, and having a finite radius of curvature, wherein the first clad layer contiguous to the second portion of the core layer and overlapping with the second portion of the core layer in plan view has, introduced therein, an impurity for having a refractive index different from that of the first clad layer contiguous to the first portion of the core layer and overlapping with the first portion of the core layer in plan view.
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Specification