SEMICONDUCTOR DEVICE
First Claim
Patent Images
1. A semiconductor device comprising:
- a plurality of first interconnections that are oxide semiconductors formed in parallel at predetermined intervals in a first direction;
a plurality of gate dielectric films that are formed on surfaces of the first interconnections, respectively; and
a plurality of second interconnections that are conductors formed at predetermined intervals in parallel to a second direction orthogonal to the first direction, respectively, to bridge over the gate dielectric films.
1 Assignment
0 Petitions
Accused Products
Abstract
According to an embodiment, a semiconductor device includes a plurality of first interconnections, a plurality of gate dielectric films, and a plurality of second interconnections. The plurality of first interconnections are oxide semiconductors formed in parallel at predetermined intervals in a first direction. The plurality of gate dielectric films are formed on surfaces of the first interconnections, respectively. The plurality of second interconnections are conductors formed at predetermined intervals in parallel to a second direction orthogonal to the first direction, respectively, to bridge over the gate dielectric films.
7 Citations
12 Claims
-
1. A semiconductor device comprising:
-
a plurality of first interconnections that are oxide semiconductors formed in parallel at predetermined intervals in a first direction; a plurality of gate dielectric films that are formed on surfaces of the first interconnections, respectively; and a plurality of second interconnections that are conductors formed at predetermined intervals in parallel to a second direction orthogonal to the first direction, respectively, to bridge over the gate dielectric films. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
-
Specification