METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

• US 20190093222A1
• Filed: 09/20/2018
• Published: 03/28/2019
• Est. Priority Date: 09/28/2017
• Status: Active Grant

• Current Assignee: Kokusai Electric Corp.
• Original Assignee: Kokusai Electric Corp.
• Inventors: OKUDA, Kazuyuki, MINAMI, Masayoshi, NAKAMURA, Yoshinobu, TAKAGI, Kosuke, KAGA, Yukinao, TAKEBAYASHI, Yuji
• Granted Patent: US 10,640,869 B2
• Time in Patent Office: Days
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45523 Pulsed gas flow or change of composition over time
• CPC Class Codes: C23C 16/4587 the substrate being supported substantially vertically
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01J 2237/20214 Rotation
• CPC Class Codes: H01J 2237/24585 Other variables, e.g. energy, mass, velocity, time, temperature
• CPC Class Codes: H01J 2237/3321 CVD [Chemical Vapor Deposition]
• CPC Class Codes: H01J 2237/3323 uniformity
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/67248 Temperature monitoring
• CPC Class Codes: H01L 21/67313 Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
• CPC Class Codes: H01L 21/67326 Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls

Abstract

A method of manufacturing a semiconductor device, includes: supplying precursor gas into process chamber in which plural substrates are accommodated by sequentially performing: supplying inert gas at first inert gas flow rate from first nozzle into the process chamber; supplying the inert gas at second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying precursor gas from the first nozzle into the process chamber; and supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber while the process chamber is evacuated from an upstream side of flow of the precursor gas; stopping supply of the precursor gas; removing the precursor gas remaining in the process chamber; supplying reaction gas from a second nozzle into the process chamber; and removing the reaction gas remaining in the process chamber.

Claims

1. A method of manufacturing a semiconductor device, comprising:

supplying a precursor gas stored in a reservoir part into a process chamber in which a plurality of substrates are arranged and accommodated by sequentially performing;

(a) supplying an inert gas at a first inert gas flow rate from a first nozzle extending along an arrangement direction of the plurality of substrates into the process chamber;

(b) supplying the inert gas at a second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying the precursor gas from the first nozzle into the process chamber; and

(c) supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber in a state in which the process chamber is evacuated from one end side which is an upstream side of a flow of the precursor gas;

stopping supply of the precursor gas;

removing the precursor gas remaining in the process chamber;

supplying a reaction gas from a second nozzle into the process chamber; and

removing the reaction gas remaining in the process chamber.

2. The method of claim 1, wherein the plurality of substrates are stacked in the process chamber,

wherein the precursor gas is caused to flow through the first nozzle from one end to the other end in the act of supplying the precursor gas, and

wherein the process chamber is evacuated from the one end side which is the upstream side of the flow of the precursor gas from the first nozzle.

3. The method of claim 2, wherein a supply concentration of the precursor gas is adjusted by changing an evacuation rate of the process chamber and the first inert gas flow rate and the second inert gas flow rate.

4. The method of claim 1, wherein in (a), evacuation of the process chamber is substantially stopped.

5. The method of claim 1, wherein in (b), evacuation of the process chamber is substantially stopped.

6. The method of claim 1, wherein in (a), a valve for evacuating the process chamber is fully closed.

7. The method of claim 1, wherein in (a), a valve for evacuating the process chamber is opened so that F>

V when the first inert gas flow rate is F sccm and an evacuation rate of the process chamber per unit time is V sccm.

8. The method of claim 4, wherein in (a), a valve for evacuating the process chamber is opened so that an evacuation rate of the process chamber per unit time is 10% or less of the first inert gas flow rate.

9. A non-transitory computer-readable recording medium storing a program that causes a computer to have a substrate processing apparatus perform a process, the process comprising:

supplying a precursor gas stored in a reservoir part into a process chamber in which a plurality of substrates are arranged and accommodated by sequentially performing;

supplying an inert gas at a first inert gas flow rate from a first nozzle into the process chamber in a state in which evacuation of the process chamber is substantially stopped in a substrate processing apparatus;

supplying the inert gas at a second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying the precursor gas from the first nozzle into the process chamber in a state in which evacuation of the process chamber is substantially stopped; and

supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber in a state in which the process chamber is evacuated from one end side which is an upstream side of a flow of the precursor gas, and stopping supply of the precursor gas;

removing the precursor gas remaining in the process chamber;

supplying a reaction gas from a second nozzle into the process chamber; and

removing the reaction gas remaining in the process chamber.

10. A substrate processing apparatus, comprising:

a process chamber in which a plurality of substrates are arranged and accommodated;

a precursor gas supply system configured to supply a precursor gas stored in the reservoir part and an inert gas to the process chamber;

a first nozzle installed in the precursor gas supply system and configured to inject the precursor gas and the inert gas to the process chamber;

a reservoir part installed in the precursor gas supply system and configured to store the precursor gas therein;

a reaction gas supply system configured to supply a reaction gas to the process chamber;

a second nozzle configured to inject the reaction gas into the process chamber;

an evacuation system configured to evacuate an inside of the process chamber from one end side which is an upstream side of a flow of the precursor gas; and

a controller configured to control the precursor gas supply system, the reaction gas supply system and the evacuation system to perform a process, the process comprising;

supplying the precursor gas into the process chamber by sequentially performing;

supplying the inert gas at a first inert gas flow rate from the first nozzle into the process chamber in a state in which evacuation of the process chamber in which the plurality of substrates are accommodated is substantially stopped;

supplying the inert gas at a second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying the precursor gas from the first nozzle into the process chamber in a state in which evacuation of the process chamber is substantially stopped; and

supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber in a state in which the process chamber is evacuated;

removing the precursor gas remaining in the process chamber;

supplying the reaction gas from the second nozzle into the process chamber; and

removing the reaction gas remaining in the process chamber.