METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
First Claim
1. A method of manufacturing a semiconductor device, comprising:
- supplying a precursor gas stored in a reservoir part into a process chamber in which a plurality of substrates are arranged and accommodated by sequentially performing;
(a) supplying an inert gas at a first inert gas flow rate from a first nozzle extending along an arrangement direction of the plurality of substrates into the process chamber;
(b) supplying the inert gas at a second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying the precursor gas from the first nozzle into the process chamber; and
(c) supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber in a state in which the process chamber is evacuated from one end side which is an upstream side of a flow of the precursor gas;
stopping supply of the precursor gas;
removing the precursor gas remaining in the process chamber;
supplying a reaction gas from a second nozzle into the process chamber; and
removing the reaction gas remaining in the process chamber.
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Accused Products
Abstract
A method of manufacturing a semiconductor device, includes: supplying precursor gas into process chamber in which plural substrates are accommodated by sequentially performing: supplying inert gas at first inert gas flow rate from first nozzle into the process chamber; supplying the inert gas at second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying precursor gas from the first nozzle into the process chamber; and supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber while the process chamber is evacuated from an upstream side of flow of the precursor gas; stopping supply of the precursor gas; removing the precursor gas remaining in the process chamber; supplying reaction gas from a second nozzle into the process chamber; and removing the reaction gas remaining in the process chamber.
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Citations
10 Claims
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1. A method of manufacturing a semiconductor device, comprising:
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supplying a precursor gas stored in a reservoir part into a process chamber in which a plurality of substrates are arranged and accommodated by sequentially performing; (a) supplying an inert gas at a first inert gas flow rate from a first nozzle extending along an arrangement direction of the plurality of substrates into the process chamber; (b) supplying the inert gas at a second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying the precursor gas from the first nozzle into the process chamber; and (c) supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber in a state in which the process chamber is evacuated from one end side which is an upstream side of a flow of the precursor gas; stopping supply of the precursor gas; removing the precursor gas remaining in the process chamber; supplying a reaction gas from a second nozzle into the process chamber; and removing the reaction gas remaining in the process chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A non-transitory computer-readable recording medium storing a program that causes a computer to have a substrate processing apparatus perform a process, the process comprising:
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supplying a precursor gas stored in a reservoir part into a process chamber in which a plurality of substrates are arranged and accommodated by sequentially performing; supplying an inert gas at a first inert gas flow rate from a first nozzle into the process chamber in a state in which evacuation of the process chamber is substantially stopped in a substrate processing apparatus; supplying the inert gas at a second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying the precursor gas from the first nozzle into the process chamber in a state in which evacuation of the process chamber is substantially stopped; and supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber in a state in which the process chamber is evacuated from one end side which is an upstream side of a flow of the precursor gas, and stopping supply of the precursor gas; removing the precursor gas remaining in the process chamber; supplying a reaction gas from a second nozzle into the process chamber; and removing the reaction gas remaining in the process chamber.
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10. A substrate processing apparatus, comprising:
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a process chamber in which a plurality of substrates are arranged and accommodated; a precursor gas supply system configured to supply a precursor gas stored in the reservoir part and an inert gas to the process chamber; a first nozzle installed in the precursor gas supply system and configured to inject the precursor gas and the inert gas to the process chamber; a reservoir part installed in the precursor gas supply system and configured to store the precursor gas therein; a reaction gas supply system configured to supply a reaction gas to the process chamber; a second nozzle configured to inject the reaction gas into the process chamber; an evacuation system configured to evacuate an inside of the process chamber from one end side which is an upstream side of a flow of the precursor gas; and a controller configured to control the precursor gas supply system, the reaction gas supply system and the evacuation system to perform a process, the process comprising; supplying the precursor gas into the process chamber by sequentially performing; supplying the inert gas at a first inert gas flow rate from the first nozzle into the process chamber in a state in which evacuation of the process chamber in which the plurality of substrates are accommodated is substantially stopped; supplying the inert gas at a second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying the precursor gas from the first nozzle into the process chamber in a state in which evacuation of the process chamber is substantially stopped; and supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber in a state in which the process chamber is evacuated; removing the precursor gas remaining in the process chamber; supplying the reaction gas from the second nozzle into the process chamber; and removing the reaction gas remaining in the process chamber.
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Specification