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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

  • US 20190093222A1
  • Filed: 09/20/2018
  • Published: 03/28/2019
  • Est. Priority Date: 09/28/2017
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, comprising:

  • supplying a precursor gas stored in a reservoir part into a process chamber in which a plurality of substrates are arranged and accommodated by sequentially performing;

    (a) supplying an inert gas at a first inert gas flow rate from a first nozzle extending along an arrangement direction of the plurality of substrates into the process chamber;

    (b) supplying the inert gas at a second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying the precursor gas from the first nozzle into the process chamber; and

    (c) supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber in a state in which the process chamber is evacuated from one end side which is an upstream side of a flow of the precursor gas;

    stopping supply of the precursor gas;

    removing the precursor gas remaining in the process chamber;

    supplying a reaction gas from a second nozzle into the process chamber; and

    removing the reaction gas remaining in the process chamber.

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